AO3435 MOSFET. Datasheet pdf. Equivalent
Type Designator: AO3435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 2.9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 70 pF
Maximum Drain-Source On-State Resistance (Rds): 0.056 Ohm
Package: SOT23-3
AO3435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO3435 Datasheet (PDF)
1.1. ao3435.pdf 
Size:309K _aosemi
AO3435 20V P-Channel MOSFET General Description Product Summary The AO3435 uses advanced trench technology to VDS = -20V provide excellent RDS(ON), low gate charge and ID = -3.5A (VGS = -4.5V) operation with gate voltages as low as 1.5V. This RDS(ON) < 70mΩ (VGS =- 4.5V) device is suitable for use in buck convertor RDS(ON) < 90mΩ (VGS = -2.5V) applications. RDS(ON) < 110mΩ (V
1.2. ao3435.pdf Size:2010K _kexin
SMD Type MOSFET P-Channel MOSFET AO3435 (KO3435) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-20V ● ID =-3.5 A (VGS =-4.5V) 1 2 ● RDS(ON) ＜ 70mΩ (VGS =-4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 ● RDS(ON) ＜ 90mΩ (VGS =-2.5V) ● RDS(ON) ＜ 110mΩ (VGS =-1.8V) ● RDS(ON) ＜ 130mΩ (VGS =-1.5V) 1. Gate 2. Source 3. Dr
1.3. ao3435-3.pdf Size:2022K _kexin
SMD Type MOSFET P-Channel MOSFET AO3435 (KO3435) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-20V ● ID =-3.5 A (VGS =-4.5V) 1 2 ● RDS(ON) ＜ 70mΩ (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 ● RDS(ON) ＜ 90mΩ (VGS =-2.5V) 1.9-0.2 ● RDS(ON) ＜ 110mΩ (VGS =-1.8V) ● RDS(ON) ＜ 130mΩ (VGS =-1.5V) 1. Gate 2. Source 3
Datasheet: AO3420 , AO3421 , AO3421E , AO3422 , AO3423 , AO3424 , AO3434 , AO3434A , FDS4435 , AO3438 , AO3442 , AO3460 , AO4202 , AO4240 , AO4260 , AO4264 , AO4266 .
