AO4403 Todos los transistores

 ..1. Size:369K  aosemi
 ao4403.pdf

AO4403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -6A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

 ..2. Size:1374K  kexin
 ao4403.pdf

SMD Type MOSFET P-Channel MOSFET AO4403 (KO4403) SOP-8 Features VDS (V) =-30V ID =-6 A (VGS =-10V) 1.50 0.15 RDS(ON) 48m (VGS =-10V) RDS(ON) 57m (VGS =-4.5V) 1 Source 5 Drain RDS(ON) 80m (VGS =-2.5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

 9.1. Size:332K  aosemi
 ao4407c.pdf

AO4407C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)

 9.2. Size:378K  aosemi
 ao4405.pdf

AO4405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ID (at VGS=-10V) -6A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

 9.3. Size:561K  aosemi
 ao4404b.pdf

AO4404B 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 8.5A with gate voltages as low as 2.5V. This device makes an RDS(ON) (at VGS=10V)

 9.4. Size:275K  aosemi
 ao4402.pdf

AO4402 20V N-Channel MOSFET General Description Product Summary VDS 20V The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 9.5. Size:207K  aosemi
 ao4407a.pdf

AO4407A 30V P-Channel MOSFET General Description Product Summary The AO4407A uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -20V) with a 25V gate rating. This device is suitable for use as RDS(ON)

 9.6. Size:372K  aosemi
 ao4400.pdf

July 2001 AO4400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4400 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 8.5A operation with gate voltages as low as 2.5V. This RDS(ON)

 9.7. Size:343K  aosemi
 ao4402g.pdf

AO4402G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

 9.8. Size:328K  aosemi
 ao4406a.pdf

AO4406A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 13A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

 9.9. Size:340K  aosemi
 ao4407.pdf

AO4407 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-20V) -12A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-20V)

 9.10. Size:398K  aosemi
 ao4405e.pdf

AO4405E 30V P-Channel MOSFET General Description Product Summary VDS -30V Trench Power LV (P-ch) MOSFET technology Low RDS(ON) ID (at VGS=-10V) -6A Low Gate Charge RDS(ON) (at VGS=-10V)

 9.11. Size:302K  aosemi
 ao4409.pdf

AO4409 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -15A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 9.12. Size:2524K  kexin
 ao4405.pdf

SMD Type MOSFET P-Channel MOSFET AO4405 (KO4405) SOP-8 Features VDS (V) =-30V ID =-6 A (VGS =-10V) 1.50 0.15 RDS(ON) 50m (VGS =-10V) RDS(ON) 85m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30

 9.13. Size:2214K  kexin
 ao4404b.pdf

SMD Type MOSFET N-Channel MOSFET AO4404B (KO4404B) SOP-8 Features VDS (V) = 30V ID = 8.5 A (VGS = 10V) 1.50 0.15 RDS(ON) 24m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 Source 5 Drain RDS(ON) 48m (VGS = 2.5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

 9.14. Size:1484K  kexin
 ao4402.pdf

SMD Type MOSFET N-Channel MOSFET AO4402 (KO4402) SOP-8 Features VDS (V) = 20V ID = 20 A (VGS = 4.5V) 1.50 0.15 RDS(ON) 5.5m (VGS = 4.5V) RDS(ON) 7m (VGS = 2.5V) 1 Source 5 Drain 6 Drain 2 Source D 7 Drain 3 Source 8 Drain 4 Gate G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gat

 9.15. Size:1244K  kexin
 ao4404.pdf

SMD Type MOSFET N-Channel MOSFET AO4404 (KO4404) SOP-8 Features VDS (V) = 30V ID = 8.5 A (VGS = 10V) 1.50 0.15 RDS(ON) 24m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 Source 5 Drain RDS(ON) 48m (VGS = 2.5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 9.16. Size:1643K  kexin
 ao4407a.pdf

SMD Type MOSFET P-Channel MOSFET AO4407A (KO4407A) SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 11m (VGS =-20V) RDS(ON) 13m (VGS =-10V) 1 Source 5 Drain RDS(ON) 17m (VGS =-6V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

 9.17. Size:1498K  kexin
 ao4406.pdf

SMD Type MOSFET N-Channel MOSFET AO4406 (KO4406) SOP-8 Features VDS (V) = 30V D ID = 11.5 A (VGS = 10V) 1.50 0.15 RDS(ON) 14m (VGS = 10V) RDS(ON) 16.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain RDS(ON) 26m (VGS = 2.5V) 2 Source 7 Drain 3 Source G 8 Drain 4 Gate S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 9.18. Size:1564K  kexin
 ao4408.pdf

SMD Type MOSFET N-Channel MOSFET AO4408 (KO4408) SOP-8 Features VDS (V) = 30V ID = 12 A (VGS = 10V) RDS(ON) 13m (VGS = 10V) 1.50 0.15 RDS(ON) 16m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-

 9.19. Size:1723K  kexin
 ao4406a.pdf

SMD Type MOSFET N-Channel MOSFET AO4406A (KO4406A) SOP-8 Features VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V) 1.50 0.15 RDS(ON) 15.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V

 9.20. Size:2315K  kexin
 ao4407.pdf

SMD Type MOSFET P-Channel MOSFET AO4407 SOP-8 Features VDS (V) =-30V ID =-12 A (VGS =-20V) 1.50 0.15 RDS(ON) 13m (VGS =-20V) D RDS(ON) 14m (VGS =-10V) D 1 Source 5 Drain RDS(ON) 30m (VGS =-5V) 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai

 9.21. Size:1350K  kexin
 ao4409.pdf

SMD Type MOSFET P-Channel MOSFET AO4409 (KO4409) SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-10V) RDS(ON) 7.5m (VGS =-10V) 1.50 0.15 RDS(ON) 12m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gat

 9.22. Size:1565K  cn vbsemi
 ao4405.pdf

AO4405 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi

 9.23. Size:1701K  cn vbsemi
 ao4404.pdf

AO4404 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8

 9.24. Size:830K  cn vbsemi
 ao4407a.pdf

AO4407A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs

 9.25. Size:833K  cn vbsemi
 ao4406.pdf

AO4406 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8

 9.26. Size:833K  cn vbsemi
 ao4408.pdf

AO4408 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8

 9.27. Size:833K  cn vbsemi
 ao4406a.pdf

AO4406A www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-