AO4447 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO444730V P-Channel MOSFETGeneral Description Product SummaryThe AO4447 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), and ultra-low low gateID = -15 A (VGS = -10V)charge. This device is suitable for use as a loadMax RDS(ON)

SMD Type MOSFETP-Channel MOSFETAO4447 (KO4447)SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-10V) RDS(ON) 7.5m (VGS =-10V)1.50 0.15 RDS(ON) 12m (VGS =-4.5V) ESD Rating: 4KV HBM1 Source 5 Drain6 DrainD 2 Source7 Drain3 Source8 Drain4 GateGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

AO4447A30V P-Channel MOSFETGeneral Description Product Summary The AO4447A uses advanced trench technology to VDS -30Vprovide excellent RDS(ON) with low gate charge.This ID (at VGS = -10V) -17Adevice is ideal for load switch and battery protection RDS(ON) (at VGS = -10V)

SMD Type MOSFETP-Channel MOSFETAO4447A (KO4447A)SOP-8 Features VDS (V) =-30V ID =-17 A (VGS =-10V) RDS(ON) 7m (VGS =-10V)1.50 0.15 RDS(ON) 8m (VGS =-4.5V) RDS(ON) 9m (VGS =-4V)1 Source 5 Drain ESD Rating: 2000V HBM6 Drain2 Source7 Drain3 Source8 Drain4 GateDRgGS Absolute Maximum Ratings Ta = 25Par

AO4447Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G