AO4447 Todos los transistores

 ..1. Size:169K  aosemi
 ao4447.pdf

AO4447 30V P-Channel MOSFET General Description Product Summary The AO4447 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), and ultra-low low gate ID = -15 A (VGS = -10V) charge. This device is suitable for use as a load Max RDS(ON)

 ..2. Size:1526K  kexin
 ao4447.pdf

SMD Type MOSFET P-Channel MOSFET AO4447 (KO4447) SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-10V) RDS(ON) 7.5m (VGS =-10V) 1.50 0.15 RDS(ON) 12m (VGS =-4.5V) ESD Rating 4KV HBM 1 Source 5 Drain 6 Drain D 2 Source 7 Drain 3 Source 8 Drain 4 Gate G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source

 0.1. Size:302K  aosemi
 ao4447a.pdf

AO4447A 30V P-Channel MOSFET General Description Product Summary The AO4447A uses advanced trench technology to VDS -30V provide excellent RDS(ON) with low gate charge.This ID (at VGS = -10V) -17A device is ideal for load switch and battery protection RDS(ON) (at VGS = -10V)

 0.2. Size:1685K  kexin
 ao4447a.pdf

SMD Type MOSFET P-Channel MOSFET AO4447A (KO4447A) SOP-8 Features VDS (V) =-30V ID =-17 A (VGS =-10V) RDS(ON) 7m (VGS =-10V) 1.50 0.15 RDS(ON) 8m (VGS =-4.5V) RDS(ON) 9m (VGS =-4V) 1 Source 5 Drain ESD Rating 2000V HBM 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D Rg G S Absolute Maximum Ratings Ta = 25 Par

 0.3. Size:821K  cn vbsemi
 ao4447a.pdf

AO4447A www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G