AO4452 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO4452100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AO4452 is fabricated with SDMOSTM trench ID (at VGS=10V) 8Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAO4452 (KO4452)SOP-8 Features VDS (V) = 100V ID = 8 A (VGS = 10V) RDS(ON) 25m (VGS = 10V)1.50 0.15 RDS(ON) 31m (VGS = 7V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100V Gate-S

AO445530V P-Channel MOSFETGeneral Description Product SummaryThe AO4455 uses advanced trench technology to provide VDS (V) = -30Vexcellent RDS(ON), and ultra-low low gate charge with a ID = -17A (VGS = -20V)25V gate rating. This device is suitable for use as a load RDS(ON)

AO4454100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AO4454 is fabricated with SDMOSTM trench ID (at VGS=10V) 6.5Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

AO445040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4450 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gate ID (at VGS=10V) 7Acharge. This device is suitable for use as a load RDS(ON) (at VGS=10V)

AO4456AO4456N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide VDS (V) = 30Vexcellent RDS(ON),and low gate charge. This device is ID =20A (VGS = 10V)suitable for use as a low side FET in SMPS, load RDS(ON)

AO4458N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4458/L uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) with low gate charge. This ID = 20A (VGS = 10V)device is ESD protected and it is suitable for use as RDS(ON)

AO445930V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4459 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -6.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

AO445312V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO4453 combines advanced trench MOSFET -12Vtechnology with a low resistance package to provide ID (at VGS=-4.5V) -9Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

SMD Type MOSFETP-Channel MOSFETAO4455 (KO4455)SOP-8 Features VDS (V) =-30V ID =-17 A (VGS =-20V) RDS(ON) 6.2m (VGS =-20V)1.50 0.15 RDS(ON) 7.2m (VGS =-10V) ESD Rating: 2000V HBM 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Vo

SMD Type MOSFETN-Channel MOSFETAO4454 (KO4454)SOP-8 Features VDS (V) = 100V ID = 6.5 A (VGS = 10V)1.50 0.15 RDS(ON) 36m (VGS = 10V) RDS(ON) 43m (VGS = 7V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100V Gate

SMD Type MOSFETN-Channel MOSFETAO4450 (KO4450)SOP-8 Features VDS (V) = 40V ID = 7 A (VGS = 10V)1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 38m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-

SMD Type MOSFETP-Channel MOSFETAO4459 (KO4459)SOP-8 Features VDS (V) =-30V ID =-6.5 A (VGS =-10V) RDS(ON) 46m (VGS =-10V)1.50 0.15 RDS(ON) 72m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30

SMD Type MOSFETP-Channel MOSFETAO4453 (KO4453)SOP-8 Features VDS (V) =-12V ID =-9 A (VGS =-4.5V) RDS(ON) 19m (VGS =-4.5V)1.50 0.15 RDS(ON) 22m (VGS =-3.3V) RDS(ON) 26m (VGS =-2.5V)1 Source 5 Drain RDS(ON) 36m (VGS =-1.8V)6 Drain2 Source7 Drain3 Source RDS(ON) 50m (VGS =-1.5V)8 Drain4 GateDGS

AO4454www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO-8

AO4459www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop Vi

AO4453www.VBsemi.twP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC0.0100 at VGS = - 1.8 V - 13APPLICATIONS Load Switch Battery SwitchSSO