AO4452 - описание и поиск аналогов

 ..1. Size:433K  aosemi
 ao4452.pdf 

AO4452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AO4452 is fabricated with SDMOSTM trench ID (at VGS=10V) 8A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 ..2. Size:1634K  kexin
 ao4452.pdf 

SMD Type MOSFET N-Channel MOSFET AO4452 (KO4452) SOP-8 Features VDS (V) = 100V ID = 8 A (VGS = 10V) RDS(ON) 25m (VGS = 10V) 1.50 0.15 RDS(ON) 31m (VGS = 7V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-S

 9.1. Size:360K  aosemi
 ao4455.pdf 

AO4455 30V P-Channel MOSFET General Description Product Summary The AO4455 uses advanced trench technology to provide VDS (V) = -30V excellent RDS(ON), and ultra-low low gate charge with a ID = -17A (VGS = -20V) 25V gate rating. This device is suitable for use as a load RDS(ON)

 9.2. Size:276K  aosemi
 ao4454.pdf 

AO4454 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AO4454 is fabricated with SDMOSTM trench ID (at VGS=10V) 6.5A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.3. Size:309K  aosemi
 ao4450.pdf 

AO4450 40V N-Channel MOSFET General Description Product Summary VDS 40V The AO4450 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate ID (at VGS=10V) 7A charge. This device is suitable for use as a load RDS(ON) (at VGS=10V)

 9.4. Size:142K  aosemi
 ao4456.pdf 

AO4456 AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide VDS (V) = 30V excellent RDS(ON),and low gate charge. This device is ID =20A (VGS = 10V) suitable for use as a low side FET in SMPS, load RDS(ON)

 9.5. Size:132K  aosemi
 ao4458.pdf 

AO4458 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4458/L uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) with low gate charge. This ID = 20A (VGS = 10V) device is ESD protected and it is suitable for use as RDS(ON)

 9.6. Size:599K  aosemi
 ao4459.pdf 

AO4459 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -6.5A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 9.7. Size:338K  aosemi
 ao4453.pdf 

AO4453 12V P-Channel MOSFET General Description Product Summary VDS The AO4453 combines advanced trench MOSFET -12V technology with a low resistance package to provide ID (at VGS=-4.5V) -9A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

 9.8. Size:1740K  kexin
 ao4455.pdf 

SMD Type MOSFET P-Channel MOSFET AO4455 (KO4455) SOP-8 Features VDS (V) =-30V ID =-17 A (VGS =-20V) RDS(ON) 6.2m (VGS =-20V) 1.50 0.15 RDS(ON) 7.2m (VGS =-10V) ESD Rating 2000V HBM 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Vo

 9.9. Size:1236K  kexin
 ao4454.pdf 

SMD Type MOSFET N-Channel MOSFET AO4454 (KO4454) SOP-8 Features VDS (V) = 100V ID = 6.5 A (VGS = 10V) 1.50 0.15 RDS(ON) 36m (VGS = 10V) RDS(ON) 43m (VGS = 7V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate

 9.10. Size:1610K  kexin
 ao4450.pdf 

SMD Type MOSFET N-Channel MOSFET AO4450 (KO4450) SOP-8 Features VDS (V) = 40V ID = 7 A (VGS = 10V) 1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 38m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-

 9.11. Size:2038K  kexin
 ao4459.pdf 

SMD Type MOSFET P-Channel MOSFET AO4459 (KO4459) SOP-8 Features VDS (V) =-30V ID =-6.5 A (VGS =-10V) RDS(ON) 46m (VGS =-10V) 1.50 0.15 RDS(ON) 72m (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30

 9.12. Size:1821K  kexin
 ao4453.pdf 

SMD Type MOSFET P-Channel MOSFET AO4453 (KO4453) SOP-8 Features VDS (V) =-12V ID =-9 A (VGS =-4.5V) RDS(ON) 19m (VGS =-4.5V) 1.50 0.15 RDS(ON) 22m (VGS =-3.3V) RDS(ON) 26m (VGS =-2.5V) 1 Source 5 Drain RDS(ON) 36m (VGS =-1.8V) 6 Drain 2 Source 7 Drain 3 Source RDS(ON) 50m (VGS =-1.5V) 8 Drain 4 Gate D G S

 9.13. Size:840K  cn vbsemi
 ao4454.pdf 

AO4454 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO-8

 9.14. Size:803K  cn vbsemi
 ao4459.pdf 

AO4459 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi

 9.15. Size:1606K  cn vbsemi
 ao4453.pdf 

AO4453 www.VBsemi.tw P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET 0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC 0.0100 at VGS = - 1.8 V - 13 APPLICATIONS Load Switch Battery Switch S SO