AO4488 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4488
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9.8 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4488

AO4488 Datasheet (PDF)

..1. Size:185K aosemi
ao4488.pdf

AO448830V N-Channel MOSFETGeneral Description Product SummaryThe AO4488 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) with low gate charge.ID = 20A (VGS = 10V)This device is ESD protected and it is suitable forRDS(ON)

..2. Size:1302K kexin
ao4488.pdf

SMD Type MOSFETN-Channel MOSFETAO4488 (KO4488)SOP-8 Unit:mm Features VDS (V) = 30V ID = 20 A (VGS = 10V)1.50 0.15 RDS(ON) 4.6m (VGS = 10V) RDS(ON) 6.4m (VGS = 4.5V) ESD Rating: 2KV HBM 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady Sta

9.1. Size:167K aosemi
ao4480.pdf

AO448040V N-Channel MOSFETGeneral Description Product SummaryThe AO4480 uses advanced trench technology to VDS (V) = 40Vprovide excellent RDS(ON), low gate charge. It is ESDID = 14A (VGS = 10V)Protected. This device is suitable for use as a low sideRDS(ON)

9.2. Size:199K aosemi
ao4482.pdf

AO4482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO4482 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 6Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

9.3. Size:180K aosemi
ao4485.pdf

AO448540V P-Channel MOSFETGeneral Description Product SummaryThe AO4485 uses advanced trench technology to VDS (V) = -40Vprovide excellent RDS(ON) with low gate charge. ThisID = -10A (VGS = -10V)device is suitable for use as a DC-DC converterRDS(ON)

9.4. Size:180K aosemi
ao4484.pdf

AO448440V N-Channel MOSFETGeneral Description Product SummaryThe AO4484 uses advanced trench technology to VDS (V) = 40Vprovide excellent RDS(ON) with low gate charge. This isID = 10A (VGS = 10V)an all purpose device that is suitable for use in a wideRDS(ON)

9.5. Size:546K aosemi
ao4486.pdf

AO4486100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO4486 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 4.2Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

9.6. Size:1486K kexin
ao4480.pdf

SMD Type MOSFETN-Channel MOSFETAO4480 (KO4480)SOP-8 Unit:mm Features VDS (V) = 40V ID = 14 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V)1.50 0.15 RDS(ON) 15.5m (VGS = 4.5V) ESD Rating: 4KV HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

9.7. Size:1120K kexin
ao4482.pdf

SMD Type MOSFETN-Channel MOSFETAO4482 (KO4482)SOP-8 Unit:mm Features VDS (V) = 100V ID = 6 A (VGS = 10V) RDS(ON) 37m (VGS = 10V)1.50 0.15 RDS(ON) 42m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100

9.8. Size:1108K kexin
ao4485.pdf

SMD Type MOSFETP-Channel MOSFETAO4485 (KO4485)SOP-8 Unit:mm Features VDS (V) =-40V ID =-10 A (VGS =-10V)1.50 0.15 RDS(ON) 15m (VGS =-10V) RDS(ON) 20m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady State Unit Drain-Source Volt

9.9. Size:1290K kexin
ao4484.pdf

SMD Type MOSFETN-Channel MOSFETAO4484 (KO4484)SOP-8 Unit:mm Features VDS (V) = 40V ID = 10 A (VGS = 10V)1.50 0.15 RDS(ON) 10m (VGS = 10V) RDS(ON) 12m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady State Unit Drain-Source Volt

9.10. Size:3132K kexin
ao4486.pdf

SMD Type MOSFETN-Channel MOSFETAO4486 (KO4486)SOP-8 Unit:mm Features VDS (V) = 100V ID = 4.2 A (VGS = 10V)1.50 0.15 RDS(ON) 79m (VGS = 10V) RDS(ON) 90m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateD DG GSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt

9.11. Size:2331K cn vbsemi
ao4480.pdf

AO4480www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectificat

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