All MOSFET. AO4488 Datasheet

 

AO4488 MOSFET. Datasheet pdf. Equivalent

Type Designator: AO4488

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 9.8 nS

Drain-Source Capacitance (Cd): 740 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0046 Ohm

Package: SO-8

AO4488 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO4488 Datasheet (PDF)

1.1. ao4488.pdf Size:185K _aosemi

AO4488
AO4488

AO4488 30V N-Channel MOSFET General Description Product Summary The AO4488 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) with low gate charge. ID = 20A (VGS = 10V) This device is ESD protected and it is suitable for RDS(ON) < 4.6mΩ (VGS = 10V) use as a load switch or in PWM applications. RDS(ON) < 6.4mΩ (VGS = 4.5V) ESD Protected 100% UIS Tested 100

1.2. ao4488.pdf Size:1302K _kexin

AO4488
AO4488

SMD Type MOSFET N-Channel MOSFET AO4488 (KO4488) SOP-8 Unit:mm ■ Features ● VDS (V) = 30V ● ID = 20 A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 4.6mΩ (VGS = 10V) ● RDS(ON) < 6.4mΩ (VGS = 4.5V) ● ESD Rating: 2KV HBM 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 10 Sec Steady Sta

5.1. ao4480.pdf Size:167K _aosemi

AO4488
AO4488

AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to VDS (V) = 40V provide excellent RDS(ON), low gate charge. It is ESD ID = 14A (VGS = 10V) Protected. This device is suitable for use as a low side RDS(ON) < 11.5mΩ (VGS = 10V) switch in SMPS and general purpose applications. RDS(ON) < 15.5mΩ (VGS = 4.5V) ESD Rating: 4KV HBM

5.2. ao4485.pdf Size:180K _aosemi

AO4488
AO4488

AO4485 40V P-Channel MOSFET General Description Product Summary The AO4485 uses advanced trench technology to VDS (V) = -40V provide excellent RDS(ON) with low gate charge. This ID = -10A (VGS = -10V) device is suitable for use as a DC-DC converter RDS(ON) < 15mΩ (VGS = -10V) application. RDS(ON) < 20mΩ (VGS = -4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View

5.3. ao4486.pdf Size:546K _aosemi

AO4488
AO4488

AO4486 100V N-Channel MOSFET General Description Product Summary VDS 100V The AO4486 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 4.2A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) < 79mΩ converters and synchronous rectifiers for consumer, RDS(ON) (at VGS = 4.5V) < 90mΩ telecom, industrial powe

5.4. ao4482.pdf Size:199K _aosemi

AO4488
AO4488

AO4482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AO4482 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 6A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) < 37mΩ converters and synchronous rectifiers for consumer, RDS(ON) (at VGS = 4.5V) < 42mΩ telecom, industrial power

5.5. ao4484.pdf Size:180K _aosemi

AO4488
AO4488

AO4484 40V N-Channel MOSFET General Description Product Summary The AO4484 uses advanced trench technology to VDS (V) = 40V provide excellent RDS(ON) with low gate charge. This is ID = 10A (VGS = 10V) an all purpose device that is suitable for use in a wide RDS(ON) < 10mΩ (VGS = 10V) range of power conversion applications. RDS(ON) < 12mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Teste

5.6. ao4480.pdf Size:1486K _kexin

AO4488
AO4488

SMD Type MOSFET N-Channel MOSFET AO4480 (KO4480) SOP-8 Unit:mm ■ Features ● VDS (V) = 40V ● ID = 14 A (VGS = 10V) ● RDS(ON) < 11.5mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) < 15.5mΩ (VGS = 4.5V) ● ESD Rating: 4KV HBM 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit

5.7. ao4485.pdf Size:1108K _kexin

AO4488
AO4488

SMD Type MOSFET P-Channel MOSFET AO4485 (KO4485) SOP-8 Unit:mm ■ Features ● VDS (V) =-40V ● ID =-10 A (VGS =-10V) 1.50 0.15 ● RDS(ON) < 15mΩ (VGS =-10V) ● RDS(ON) < 20mΩ (VGS =-4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 10 Sec Steady State Unit Drain-Source Volt

5.8. ao4486.pdf Size:3132K _kexin

AO4488
AO4488

SMD Type MOSFET N-Channel MOSFET AO4486 (KO4486) SOP-8 Unit:mm ■ Features ● VDS (V) = 100V ● ID = 4.2 A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 79mΩ (VGS = 10V) ● RDS(ON) < 90mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D D G G S S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Volt

5.9. ao4482.pdf Size:1120K _kexin

AO4488
AO4488

SMD Type MOSFET N-Channel MOSFET AO4482 (KO4482) SOP-8 Unit:mm ■ Features ● VDS (V) = 100V ● ID = 6 A (VGS = 10V) ● RDS(ON) < 37mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) < 42mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 100

5.10. ao4484.pdf Size:1290K _kexin

AO4488
AO4488

SMD Type MOSFET N-Channel MOSFET AO4484 (KO4484) SOP-8 Unit:mm ■ Features ● VDS (V) = 40V ● ID = 10 A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 10mΩ (VGS = 10V) ● RDS(ON) < 12mΩ (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 10 Sec Steady State Unit Drain-Source Volt

Datasheet: AO4468 , AO4476A , AO4478 , AO4480 , AO4482 , AO4484 , AO4485 , AO4486 , IRFZ24N , AO4490 , AO4494 , AO4496 , AO4498 , AO4498E , AO4566 , AO4568 , AO4576 .

 


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