AO4488 Datasheet and Replacement
Type Designator: AO4488
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.8 nS
Cossⓘ - Output Capacitance: 740 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: SO-8
AO4488 substitution
AO4488 Datasheet (PDF)
ao4488.pdf

AO448830V N-Channel MOSFETGeneral Description Product SummaryThe AO4488 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) with low gate charge.ID = 20A (VGS = 10V)This device is ESD protected and it is suitable forRDS(ON)
ao4488.pdf

SMD Type MOSFETN-Channel MOSFETAO4488 (KO4488)SOP-8 Unit:mm Features VDS (V) = 30V ID = 20 A (VGS = 10V)1.50 0.15 RDS(ON) 4.6m (VGS = 10V) RDS(ON) 6.4m (VGS = 4.5V) ESD Rating: 2KV HBM 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady Sta
ao4480.pdf

AO448040V N-Channel MOSFETGeneral Description Product SummaryThe AO4480 uses advanced trench technology to VDS (V) = 40Vprovide excellent RDS(ON), low gate charge. It is ESDID = 14A (VGS = 10V)Protected. This device is suitable for use as a low sideRDS(ON)
ao4482.pdf

AO4482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO4482 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 6Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
Datasheet: AO4468 , AO4476A , AO4478 , AO4480 , AO4482 , AO4484 , AO4485 , AO4486 , 18N50 , AO4490 , AO4494 , AO4496 , AO4498 , AO4498E , AO4566 , AO4568 , AO4576 .
History: 2SJ551S
Keywords - AO4488 MOSFET datasheet
AO4488 cross reference
AO4488 equivalent finder
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History: 2SJ551S



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