AO4496 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4496
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.2 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0195 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4496

AO4496 Datasheet (PDF)

..1. Size:293K aosemi
ao4496.pdf

AO4496General Description Product SummaryThe AO4496 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) with low gate charge. This ID = 10A (VGS = 10V)device is suitable for use as a DC-DC converter RDS(ON)

..2. Size:1690K kexin
ao4496.pdf

SMD Type MOSFETN-Channel MOSFETAO4496 (KO4496)SOP-8 Unit:mm Features VDS (V) = 30V ID = 10 A (VGS = 10V)1.50 0.15 RDS(ON) 19.5m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

9.1. Size:187K aosemi
ao4490.pdf

AO449030V N-Channel MOSFETGeneral Description Product SummaryThe AO4490 uses advanced trench technology toVDS (V) = 30Vprovide excellent RDS(ON), low gate charge andID = 16A (VGS = 10V)operation with gate voltages as low as 4.5V, whileRDS(ON)

9.2. Size:261K aosemi
ao4498e.pdf

AO4498E30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4498E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.3. Size:187K aosemi
ao4494.pdf

AO449430V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AO4494 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 18A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)

9.4. Size:185K aosemi
ao4498.pdf

AO449830V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AO4498 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 18A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)

9.5. Size:1040K aosemi
ao4492.pdf

AO449230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4492 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 14Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.6. Size:1159K kexin
ao4490.pdf

SMD Type MOSFETN-Channel MOSFETAO4490 (KO4490)SOP-8Unit:mm Features VDS (V) = 30V ID = 16 A (VGS = 10V)1.50 0.15 RDS(ON) 7.2m (VGS = 10V) RDS(ON) 10m (VGS = 4.5V) ESD Rating: 2KV HBM 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateD G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

9.7. Size:1373K kexin
ao4498e.pdf

SMD Type MOSFETN-Channel MOSFETAO4498E (KO4498E)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON) 5.8m (VGS = 10V)1.50 0.15 RDS(ON) 8.5m (VGS = 4.5V) ESD Rating: 2KV HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

9.8. Size:1248K kexin
ao4494.pdf

SMD Type MOSFETN-Channel MOSFETAO4494 (KO4494)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 6.5m (VGS = 10V) RDS(ON) 9.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

9.9. Size:1411K kexin
ao4498.pdf

SMD Type MOSFETN-Channel MOSFETAO4498 (KO4498)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 5.5m (VGS = 10V) RDS(ON) 7.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

9.10. Size:2037K kexin
ao4492.pdf

SMD Type MOSFETN-Channel MOSFETAO4492 (KO4492)SOP-8 Unit:mm Features VDS (V) = 30V ID = 14 A (VGS = 10V)1.50 0.15 RDS(ON) 9.5m (VGS = 10V) RDS(ON) 14m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDG GSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltag

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: