AO4496 Datasheet and Replacement
Type Designator: AO4496
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id| ⓘ - Maximum Drain Current: 10
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 9.8
nC
tr ⓘ - Rise Time: 3.2
nS
Cossⓘ -
Output Capacitance: 110
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195
Ohm
Package:
SO-8
-
MOSFET ⓘ Cross-Reference Search
AO4496 Datasheet (PDF)
..1. Size:293K aosemi
ao4496.pdf 
AO4496General Description Product SummaryThe AO4496 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) with low gate charge. This ID = 10A (VGS = 10V)device is suitable for use as a DC-DC converter RDS(ON)
..2. Size:1690K kexin
ao4496.pdf 
SMD Type MOSFETN-Channel MOSFETAO4496 (KO4496)SOP-8 Unit:mm Features VDS (V) = 30V ID = 10 A (VGS = 10V)1.50 0.15 RDS(ON) 19.5m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
9.1. Size:187K aosemi
ao4490.pdf 
AO449030V N-Channel MOSFETGeneral Description Product SummaryThe AO4490 uses advanced trench technology toVDS (V) = 30Vprovide excellent RDS(ON), low gate charge andID = 16A (VGS = 10V)operation with gate voltages as low as 4.5V, whileRDS(ON)
9.2. Size:261K aosemi
ao4498e.pdf 
AO4498E30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4498E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.3. Size:187K aosemi
ao4494.pdf 
AO449430V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AO4494 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 18A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)
9.4. Size:185K aosemi
ao4498.pdf 
AO449830V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AO4498 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 18A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
9.5. Size:1040K aosemi
ao4492.pdf 
AO449230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4492 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 14Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.6. Size:1159K kexin
ao4490.pdf 
SMD Type MOSFETN-Channel MOSFETAO4490 (KO4490)SOP-8Unit:mm Features VDS (V) = 30V ID = 16 A (VGS = 10V)1.50 0.15 RDS(ON) 7.2m (VGS = 10V) RDS(ON) 10m (VGS = 4.5V) ESD Rating: 2KV HBM 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateD G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
9.7. Size:1373K kexin
ao4498e.pdf 
SMD Type MOSFETN-Channel MOSFETAO4498E (KO4498E)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON) 5.8m (VGS = 10V)1.50 0.15 RDS(ON) 8.5m (VGS = 4.5V) ESD Rating: 2KV HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
9.8. Size:1248K kexin
ao4494.pdf 
SMD Type MOSFETN-Channel MOSFETAO4494 (KO4494)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 6.5m (VGS = 10V) RDS(ON) 9.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
9.9. Size:1411K kexin
ao4498.pdf 
SMD Type MOSFETN-Channel MOSFETAO4498 (KO4498)SOP-8 Unit:mm Features VDS (V) = 30V ID = 18 A (VGS = 10V)1.50 0.15 RDS(ON) 5.5m (VGS = 10V) RDS(ON) 7.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30
9.10. Size:2037K kexin
ao4492.pdf 
SMD Type MOSFETN-Channel MOSFETAO4492 (KO4492)SOP-8 Unit:mm Features VDS (V) = 30V ID = 14 A (VGS = 10V)1.50 0.15 RDS(ON) 9.5m (VGS = 10V) RDS(ON) 14m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDG GSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltag
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Keywords - AO4496 MOSFET datasheet
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