AO4620 Todos los transistores

 ..1. Size:301K  aosemi
 ao4620.pdf

AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology n-channel p-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 30V -30V charge. The complementary MOSFETs may be used ID = 7.2A (VGS=10V) -5.3A (VGS = -10V) in inverter and other applications. RDS(ON) RDS(ON)

 ..2. Size:2318K  kexin
 ao4620.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4620 (KO4620) SOP-8 Unit mm Features N-Channel VDS (V) = 30V ID = 7.2 A (VGS = 10V) 1.50 0.15 RDS(ON) 24m (VGS = 10V) RDS(ON) 36m (VGS = 4.5V) 1 S2 5 D1 6 D1 P-Channel 2 G2 7 D2 3 S1 VDS (V) = -30V 8 D2 4 G1 ID = -5.3 A (VGS = -10V) RDS(ON) 32m (VGS = -10V) RDS(ON) 55m (VGS = -4.5V)

 9.1. Size:849K  aosemi
 ao4629.pdf

AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration is ID= 6A (VGS=10V) -5.5A (VGS=-10V) ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

 9.2. Size:251K  aosemi
 ao4622.pdf

AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4622 uses advanced trench technology VDS (V) = 20V -20V MOSFETs to provide excellent RDS(ON) and low gate ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V) charge. The complementary MOSFETs may be used RDS(ON) RDS(ON) to form a level shifted high side switch, and for a

 9.3. Size:563K  aosemi
 ao4627.pdf

AO4627 30V Complementary MOSFET General Description Product Summary The AO4627 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration ID= 4.5A (VGS=10V) -3.5A (VGS=-10V) is ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON)

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 ao4629.pdf

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 ao4624.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4624 (KO4624) SOP-8 Unit mm Features N-Channel VDS (V) = 30V ID = 6.9 A (VGS = 10V) 1.50 0.15 RDS(ON) 28m (VGS = 10V) RDS(ON) 42m (VGS = 4.5V) 1 S2 5 D1 6 D1 P-Channel 2 G2 7 D2 3 S1 VDS (V) = -30V 8 D2 4 G1 ID = -6 A (VGS = -4.5V) RDS(ON) 35m (VGS = -10V) RDS(ON) 58m (VGS = -4.5V)

 9.6. Size:1949K  kexin
 ao4622.pdf

SMD Type MOSFET Complementary Trench MOSFET AO4622 (KO4622) SOP-8 Unit mm Features N-Channel VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) 1.50 0.15 RDS(ON) 23m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 S1 5 D2 RDS(ON) 84m (VGS = 2.5V) 6 D2 2 G1 7 D1 3 S2 P-Channel 8 D1 4 G2 VDS (V) = -20V ID = -5 A (VGS = -4.5V) RDS(ON) 53m (VGS = -10V

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 ao4627.pdf