AO4620 Specs and Replacement

Type Designator: AO4620

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.2(5.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.7(6) nS

Cossⓘ - Output Capacitance: 67(140) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024(0.032) Ohm

Package: SO-8

AO4620 substitution

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AO4620 datasheet

 ..1. Size:301K  aosemi
ao4620.pdf pdf_icon

AO4620

AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology n-channel p-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 30V -30V charge. The complementary MOSFETs may be used ID = 7.2A (VGS=10V) -5.3A (VGS = -10V) in inverter and other applications. RDS(ON) RDS(ON) ... See More ⇒

 ..2. Size:2318K  kexin
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AO4620

SMD Type MOSFET Complementary Trench MOSFET AO4620 (KO4620) SOP-8 Unit mm Features N-Channel VDS (V) = 30V ID = 7.2 A (VGS = 10V) 1.50 0.15 RDS(ON) 24m (VGS = 10V) RDS(ON) 36m (VGS = 4.5V) 1 S2 5 D1 6 D1 P-Channel 2 G2 7 D2 3 S1 VDS (V) = -30V 8 D2 4 G1 ID = -5.3 A (VGS = -10V) RDS(ON) 32m (VGS = -10V) RDS(ON) 55m (VGS = -4.5V)... See More ⇒

 9.1. Size:849K  aosemi
ao4629.pdf pdf_icon

AO4620

AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration is ID= 6A (VGS=10V) -5.5A (VGS=-10V) ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON) ... See More ⇒

 9.2. Size:251K  aosemi
ao4622.pdf pdf_icon

AO4620

AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4622 uses advanced trench technology VDS (V) = 20V -20V MOSFETs to provide excellent RDS(ON) and low gate ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V) charge. The complementary MOSFETs may be used RDS(ON) RDS(ON) to form a level shifted high side switch, and for a ... See More ⇒

Detailed specifications: AO4588, AO4606, AO4611, AO4612, AO4613, AO4614B, AO4616, AO4618, STF13NM60N, AO4622, AO4627, AO4629, AO4706, AO4710, AO4712, AO4714, AO4718

Keywords - AO4620 MOSFET specs

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