AO4712 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4712
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 7 nC
   trⓘ - Tiempo de subida: 2.4 nS
   Cossⓘ - Capacitancia de salida: 128 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4712

AO4712 Datasheet (PDF)

..1. Size:278K aosemi
ao4712.pdf

AO471230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AO4712 uses advanced trench technology with ID (at VGS=10V) 13Aa monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

..2. Size:2034K kexin
ao4712.pdf

SMD Type MOSFETN-Channel MOSFETAO4712 (KO4712)SOP-8 Unit:mm Features VDS (V) = 30V ID = 13 A (VGS = 10V) 1.50 0.15 RDS(ON) 11m (VGS = 10V) RDS(ON) 14m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25

9.1. Size:187K aosemi
ao4718.pdf

AO471830V N-Channel MOSFETSRFET TM General Description FeaturesTMSRFET The AO4718 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integratedID =15A (VGS = 10V)Schottky diode to provide excellent RDS(ON),andlow gate charge. This device is suitable for use RDS(ON)

9.2. Size:172K aosemi
ao4714.pdf

AO471430V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET AO4714 uses advanced trench technologyVDS (V) = 30Vwith a monolithically integrated Schottky diode toID =20A (VGS = 10V)provide excellent RDS(ON),and low gate charge. Thisdevice is suitable for use as a low side FET in SMPS, RDS(ON)

9.3. Size:206K aosemi
ao4710.pdf

AO471030V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET The AO4710 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integrated SchottkyID =12.7A (VGS = 10V)diode to provide excellent RDS(ON), and low gatecharge. This device is suitable for use as a low side RDS(ON)

9.4. Size:1819K kexin
ao4718.pdf

SMD Type MOSFET N-Channel MOSFETAO4718 (KO4718)SOP-8 Unit:mm Features VDS (V) = 30V ID = 15 A (VGS = 10V)1.50 0.15 RDS(ON) 9m (VGS = 10V) RDS(ON) 14m (VGS = 4.5V)SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25

9.5. Size:1466K kexin
ao4714.pdf

SMD Type MOSFETN-Channel MOSFETAO4714 (KO4714)SOP-8 Unit:mm Features VDS (V) = 30V ID = 20 A (VGS = 10V) 1.50 0.15 RDS(ON) 4.7m (VGS = 10V) RDS(ON) 6.7m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25

9.6. Size:1858K kexin
ao4710.pdf

SMD Type MOSFET N-Channel MOSFETAO4710 (KO4710)SOP-8 Unit:mm Features VDS (V) = 30V1.50 0.15 ID = 12.7 A (VGS = 10V) RDS(ON) 11.8m (VGS = 10V) RDS(ON) 14.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta =

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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