AO4712 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AO4712
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.1 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 2.1 V
Максимально допустимый постоянный ток стока |Id|: 13 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7 nC
Время нарастания (tr): 2.4 ns
Выходная емкость (Cd): 128 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.011 Ohm
Тип корпуса: SO-8
AO4712 Datasheet (PDF)
ao4712.pdf
AO471230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AO4712 uses advanced trench technology with ID (at VGS=10V) 13Aa monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
ao4712.pdf
SMD Type MOSFETN-Channel MOSFETAO4712 (KO4712)SOP-8 Unit:mm Features VDS (V) = 30V ID = 13 A (VGS = 10V) 1.50 0.15 RDS(ON) 11m (VGS = 10V) RDS(ON) 14m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25
ao4718.pdf
AO471830V N-Channel MOSFETSRFET TM General Description FeaturesTMSRFET The AO4718 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integratedID =15A (VGS = 10V)Schottky diode to provide excellent RDS(ON),andlow gate charge. This device is suitable for use RDS(ON)
ao4714.pdf
AO471430V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET AO4714 uses advanced trench technologyVDS (V) = 30Vwith a monolithically integrated Schottky diode toID =20A (VGS = 10V)provide excellent RDS(ON),and low gate charge. Thisdevice is suitable for use as a low side FET in SMPS, RDS(ON)
ao4710.pdf
AO471030V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET The AO4710 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integrated SchottkyID =12.7A (VGS = 10V)diode to provide excellent RDS(ON), and low gatecharge. This device is suitable for use as a low side RDS(ON)
ao4718.pdf
SMD Type MOSFET N-Channel MOSFETAO4718 (KO4718)SOP-8 Unit:mm Features VDS (V) = 30V ID = 15 A (VGS = 10V)1.50 0.15 RDS(ON) 9m (VGS = 10V) RDS(ON) 14m (VGS = 4.5V)SRFETTM Soft Recovery MOSFET:Integrated Schottky Diode1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25
ao4714.pdf
SMD Type MOSFETN-Channel MOSFETAO4714 (KO4714)SOP-8 Unit:mm Features VDS (V) = 30V ID = 20 A (VGS = 10V) 1.50 0.15 RDS(ON) 4.7m (VGS = 10V) RDS(ON) 6.7m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25
ao4710.pdf
SMD Type MOSFET N-Channel MOSFETAO4710 (KO4710)SOP-8 Unit:mm Features VDS (V) = 30V1.50 0.15 ID = 12.7 A (VGS = 10V) RDS(ON) 11.8m (VGS = 10V) RDS(ON) 14.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta =
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
