AO4724 Todos los transistores

 ..1. Size:178K  aosemi
 ao4724.pdf

AO4724 30V N-Channel MOSFET SRFET TM General Description Product Summary TM VDS (V) = 30V SRFET The AO4724 uses advanced trench ID = 10.5A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate RDS(ON)

 ..2. Size:1501K  kexin
 ao4724.pdf

SMD Type MOSFET N-Channel MOSFET AO4724 (KO4724) SOP-8 Unit mm Features VDS (V) = 30V ID = 10.5 A (VGS = 10V) 0.15 1.50 RDS(ON) 17.5m (VGS = 10V) RDS(ON) 29m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source SRFETTM Soft Recovery MOSFET Integrated Schottky Diode 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25

 9.1. Size:174K  aosemi
 ao4722.pdf

AO4722 30V N-Channel MOSFET SRFET TM General Description Product Summary TM VDS (V) = 30V SRFET The AO4722 uses advanced trench ID =11.6A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and RDS(ON)

 9.2. Size:199K  aosemi
 ao4720.pdf

AO4720 30V N-Channel MOSFET SRFET TM General Description Product Summary TM VDS (V) = 30V SRFET The AO4720 uses advanced trench ID =13A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate RDS(ON)

 9.3. Size:178K  aosemi
 ao4726.pdf

AO4726 30V N-Channel MOSFET SRFET TM General Description Product Summary TM VDS (V) = 30V SRFET The AO4726 uses advanced trench ID =18A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. RDS(ON)

 9.4. Size:217K  aosemi
 ao4728.pdf

AO4728 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS (V) = 30V SRFETTM AO4728 uses advanced trench technology ID = 20A (VGS = 10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON)

 9.5. Size:1844K  kexin
 ao4720.pdf

 9.6. Size:824K  cn vbsemi
 ao4728.pdf

AO4728 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-