AO4724 Datasheet and Replacement

AO472430V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4724 uses advanced trenchID = 10.5A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON),and low gateRDS(ON)

SMD Type MOSFETN-Channel MOSFETAO4724 (KO4724)SOP-8 Unit:mm Features VDS (V) = 30V ID = 10.5 A (VGS = 10V) 0.151.50 RDS(ON) 17.5m (VGS = 10V) RDS(ON) 29m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25

AO472230V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4722 uses advanced trenchID =11.6A (VGS = 10V)technology with a monolithically integratedSchottky diode to provide excellent RDS(ON),andRDS(ON)

AO472030V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4720 uses advanced trenchID =13A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON),and low gateRDS(ON)

AO472630V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4726 uses advanced trenchID =18A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON) and low gate charge.RDS(ON)

AO472830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS (V) = 30VSRFETTM AO4728 uses advanced trench technologyID = 20A (VGS = 10V)with a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device isRDS(ON)

SMD Type MOSFET N-Channel MOSFETAO4720 (KO4720)SOP-8Unit:mm Features VDS (V) = 30V ID = 13 A (VGS = 10V)1.50 0.15 RDS(ON) 11m (VGS = 10V) RDS(ON) 17.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25

AO4728www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-