AO4800B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO4800B30V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4800B uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. The two ID (at VGS=10V) 6.9AMOSFETs make a compact and efficient switch and RDS(ON) (at VGS=10V)

AO480030V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4800 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6.9Amake a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

SMD Type MOSFETDual N-Channel MOSFETAO4800 (KO4800)SOP-8 Unit:mm Features VDS (V) = 30V ID = 6.9 A (VGS = 10V)1.50 0.15 RDS(ON) 27m (VGS = 10V) RDS(ON) 32m (VGS = 4.5V)1 S2 5 D1 RDS(ON) 50m (VGS = 2.5V)6 D12 G27 D23 S18 D24 G1D2D1G2G1S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

AO4800www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box L