AO4800B Todos los transistores

 ..1. Size:360K  aosemi
 ao4800b.pdf

AO4800B 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two ID (at VGS=10V) 6.9A MOSFETs make a compact and efficient switch and RDS(ON) (at VGS=10V)

 8.1. Size:360K  aosemi
 ao4800.pdf

AO4800 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6.9A make a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

 8.2. Size:1289K  kexin
 ao4800.pdf

SMD Type MOSFET Dual N-Channel MOSFET AO4800 (KO4800) SOP-8 Unit mm Features VDS (V) = 30V ID = 6.9 A (VGS = 10V) 1.50 0.15 RDS(ON) 27m (VGS = 10V) RDS(ON) 32m (VGS = 4.5V) 1 S2 5 D1 RDS(ON) 50m (VGS = 2.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G2 G1 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 8.3. Size:852K  cn vbsemi
 ao4800.pdf

AO4800 www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box L