AO4812 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AO481230V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4812 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6Amake a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

SMD Type MOSFETDual N-Channel MOSFETAO4812 (KO4812)SOP-8 Unit:mm Features VDS (V) = 30V ID = 6A (VGS = 10V)1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 42m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-So

AO4812www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box L

www.msksemi.comAO4812-MSSemiconductor CompianceD1ProductD1D2SummaryD230VVDSI (at V =10V) 6AD GSS1G1R (at V =10V)

AO481830V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4818 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=10V) 8Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

AO481330V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4813 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -7.1Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

AO481730V Dual P-Channel MOSFETGeneral Description Product SummaryThe AO4817 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), and ultra-low low gate ID = -8A (VGS = -20V)charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The RDS(ON)

AO481530V Dual P-Channel MOSFETGeneral Description Product SummaryThe AO4815 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), and ultra-low low gateID = -8A (VGS = -20V)charge with a 25V gate rating. This device is suitableRDS(ON)

AO4818B30V Dual N-channel MOSFETGeneral Description Product SummaryVDS30VThe AO4818B uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V)

SMD Type MOSFETDual N-Channel MOSFETAO4818 (KO4818)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 23m (VGS = 4.5V)1 S2 5 D1 ESD Rating: 2KV HBM6 D12 G27 D23 S18 D24 G1D1D2G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

SMD Type MOSFETDual P-Channel MOSFETAO4813 (KO4813)SOP-8 Unit:mm Features VDS (V) = -30V1.50 0.15 ID = -7.1 A (VGS = -10V) RDS(ON) 25m (VGS = -10V) RDS(ON) 40m (VGS = -4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1DDGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V G

SMD Type MOSFETDual P-Channel MOSFETAO4817 (KO4817)SOP-8 Unit:mm Features VDS (V) = -30V1.50 0.15 ID = -8 A (VGS = -20V) RDS(ON) 18m (VGS = -20V) RDS(ON) 21m (VGS = -10V)1 S25 D1 2 G2 6 D1 ESD Rating: 1.5KV HBM3 S1 7 D24 G1 8 D2D1 D2 G1 G2 S1 S2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type MOSFETDual P-Channel MOSFETAO4815 (KO4815)SOP-8 Unit:mm Features VDS (V) = -30V1.50 0.15 ID = -8 A (VGS = -20V) RDS(ON) 18m (VGS = -20V)1 S2 5 D1 RDS(ON) 20m (VGS = -10V)6 D12 G27 D23 S1ESD Rating: 2KV HBM8 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sou

SMD Type MOSFETDual N-Channel MOSFETAO4818B (KO4818B)SOP-8 Unit:mm Features VDS (V) = 30V ID = 8A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 S2 5 D1 ESD Rating: 2KV HBM6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

AO4818www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S D

AO4816www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S D

AO4813www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1 2