AO4812 - описание и поиск аналогов

 ..1. Size:255K  aosemi
 ao4812.pdf 

AO4812 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6A make a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

 ..2. Size:1097K  kexin
 ao4812.pdf 

SMD Type MOSFET Dual N-Channel MOSFET AO4812 (KO4812) SOP-8 Unit mm Features VDS (V) = 30V ID = 6A (VGS = 10V) 1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 42m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-So

 ..3. Size:851K  cn vbsemi
 ao4812.pdf 

AO4812 www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box L

 0.1. Size:1405K  msksemi
 ao4812-ms.pdf 

www.msksemi.com AO4812-MS Semiconductor Compiance D1 Product D1 D2 Summary D2 30V VDS I (at V =10V) 6A D GS S1 G1 R (at V =10V)

 9.1. Size:207K  aosemi
 ao4818.pdf 

AO4818 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4818 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ID (at VGS=10V) 8A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

 9.2. Size:280K  aosemi
 ao4813.pdf 

AO4813 30V Dual P-Channel MOSFET General Description Product Summary VDS -30V The AO4813 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -7.1A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 9.3. Size:170K  aosemi
 ao4817.pdf 

AO4817 30V Dual P-Channel MOSFET General Description Product Summary The AO4817 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), and ultra-low low gate ID = -8A (VGS = -20V) charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The RDS(ON)

 9.4. Size:169K  aosemi
 ao4815.pdf 

AO4815 30V Dual P-Channel MOSFET General Description Product Summary The AO4815 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), and ultra-low low gate ID = -8A (VGS = -20V) charge with a 25V gate rating. This device is suitable RDS(ON)

 9.5. Size:299K  aosemi
 ao4818b.pdf 

AO4818B 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4818B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V)

 9.6. Size:1430K  kexin
 ao4818.pdf 

SMD Type MOSFET Dual N-Channel MOSFET AO4818 (KO4818) SOP-8 Unit mm Features VDS (V) = 30V ID = 8A (VGS = 10V) 1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 23m (VGS = 4.5V) 1 S2 5 D1 ESD Rating 2KV HBM 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sourc

 9.7. Size:1458K  kexin
 ao4813.pdf 

SMD Type MOSFET Dual P-Channel MOSFET AO4813 (KO4813) SOP-8 Unit mm Features VDS (V) = -30V 1.50 0.15 ID = -7.1 A (VGS = -10V) RDS(ON) 25m (VGS = -10V) RDS(ON) 40m (VGS = -4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D G G S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V G

 9.8. Size:1369K  kexin
 ao4817.pdf 

SMD Type MOSFET Dual P-Channel MOSFET AO4817 (KO4817) SOP-8 Unit mm Features VDS (V) = -30V 1.50 0.15 ID = -8 A (VGS = -20V) RDS(ON) 18m (VGS = -20V) RDS(ON) 21m (VGS = -10V) 1 S2 5 D1 2 G2 6 D1 ESD Rating 1.5KV HBM 3 S1 7 D2 4 G1 8 D2 D1 D2 G1 G2 S1 S2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 9.9. Size:1094K  kexin
 ao4815.pdf 

SMD Type MOSFET Dual P-Channel MOSFET AO4815 (KO4815) SOP-8 Unit mm Features VDS (V) = -30V 1.50 0.15 ID = -8 A (VGS = -20V) RDS(ON) 18m (VGS = -20V) 1 S2 5 D1 RDS(ON) 20m (VGS = -10V) 6 D1 2 G2 7 D2 3 S1 ESD Rating 2KV HBM 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sou

 9.10. Size:2038K  kexin
 ao4818b.pdf 

SMD Type MOSFET Dual N-Channel MOSFET AO4818B (KO4818B) SOP-8 Unit mm Features VDS (V) = 30V ID = 8A (VGS = 10V) 1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V) 1 S2 5 D1 ESD Rating 2KV HBM 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source

 9.11. Size:879K  cn vbsemi
 ao4818.pdf 

AO4818 www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO-8 S D

 9.12. Size:2166K  cn vbsemi
 ao4816.pdf 

AO4816 www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO-8 S D

 9.13. Size:847K  cn vbsemi
 ao4813.pdf 

AO4813 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.021 at VGS = - 10 V - 9.5 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.028 at VGS = - 4.5 V - 8.0 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S1 S2 - Game Stations S1 1 D1 8 G1 2