AO4842 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4842
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.6 V
   Qgⓘ - Carga de la puerta: 3.5 nC
   trⓘ - Tiempo de subida: 2.7 nS
   Cossⓘ - Capacitancia de salida: 67 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4842

AO4842 Datasheet (PDF)

..1. Size:377K aosemi
ao4842.pdf

AO4842AO484230V Dual N-Channel MOSFET30V Dual N-Channel MOSFETGeneral Description Product SummaryGeneral Description Product SummaryThe AO4842 uses advanced trench technology to VDS (V) = 30VThe AO4842 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. The ID = 7.7A (VGS = 10V)provide excellent RDS(ON) and low gate charge. The ID = 7

..2. Size:1610K kexin
ao4842.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4842 (KO4842)SOP-8 Unit:mm Features VDS (V) = 30V ID = 7.7A (VGS = 10V)1.50 0.15 RDS(ON) 21m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D2D2D1D1G2G2G1G1S2S2S1S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

0.1. Size:1402K msksemi
ao4842-ms.pdf

www.msksemi.comAO4842-MSSemiconductor CompianceD1ProductD1D2SummaryD230VVDSI (at V =10V) 6AD GSS1G1R (at V =10V)

9.1. Size:311K aosemi
ao4840.pdf

AO484040V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4840 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gate ID (at VGS=10V) 6Acharge. This dual device is suitable for use as a load RDS(ON) (at VGS=10V)

9.2. Size:338K aosemi
ao4840e.pdf

AO4840E40V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Advanced trench technology 40V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

9.3. Size:1195K kexin
ao4840.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4840 (KO4840)SOP-8 Unit:mm Features VDS (V) = 40V1.50 0.15 ID = 6A (VGS = 10V) RDS(ON) 30m (VGS = 10V) RDS(ON) 38m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-So

9.4. Size:907K cn vbsemi
ao4840.pdf

AO4840www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M

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