AO4842 - описание и поиск аналогов

AO4842 AO4842 30V Dual N-Channel MOSFET 30V Dual N-Channel MOSFET General Description Product Summary General Description Product Summary The AO4842 uses advanced trench technology to VDS (V) = 30V The AO4842 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. The ID = 7.7A (VGS = 10V) provide excellent RDS(ON) and low gate charge. The ID = 7

SMD Type MOSFET Dual N-Channel MOSFET AO4842 (KO4842) SOP-8 Unit mm Features VDS (V) = 30V ID = 7.7A (VGS = 10V) 1.50 0.15 RDS(ON) 21m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D2 D1 D1 G2 G2 G1 G1 S2 S2 S1 S1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sourc

www.msksemi.com AO4842-MS Semiconductor Compiance D1 Product D1 D2 Summary D2 30V VDS I (at V =10V) 6A D GS S1 G1 R (at V =10V)

AO4840 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate ID (at VGS=10V) 6A charge. This dual device is suitable for use as a load RDS(ON) (at VGS=10V)

AO4840E 40V Dual N-Channel AlphaMOS General Description Product Summary VDS Advanced trench technology 40V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

SMD Type MOSFET Dual N-Channel MOSFET AO4840 (KO4840) SOP-8 Unit mm Features VDS (V) = 40V 1.50 0.15 ID = 6A (VGS = 10V) RDS(ON) 30m (VGS = 10V) RDS(ON) 38m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-So

AO4840 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel M