AO4842AO484230V Dual N-Channel MOSFET30V Dual N-Channel MOSFETGeneral Description Product SummaryGeneral Description Product SummaryThe AO4842 uses advanced trench technology to VDS (V) = 30VThe AO4842 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. The ID = 7.7A (VGS = 10V)provide excellent RDS(ON) and low gate charge. The ID = 7

SMD Type MOSFETDual N-Channel MOSFETAO4842 (KO4842)SOP-8 Unit:mm Features VDS (V) = 30V ID = 7.7A (VGS = 10V)1.50 0.15 RDS(ON) 21m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D2D2D1D1G2G2G1G1S2S2S1S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

www.msksemi.comAO4842-MSSemiconductor CompianceD1ProductD1D2SummaryD230VVDSI (at V =10V) 6AD GSS1G1R (at V =10V)

AO484040V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4840 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gate ID (at VGS=10V) 6Acharge. This dual device is suitable for use as a load RDS(ON) (at VGS=10V)

AO4840E40V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Advanced trench technology 40V Low RDS(ON) ID (at VGS=10V) 6A Low Gate Charge RDS(ON) (at VGS=10V)

SMD Type MOSFETDual N-Channel MOSFETAO4840 (KO4840)SOP-8 Unit:mm Features VDS (V) = 40V1.50 0.15 ID = 6A (VGS = 10V) RDS(ON) 30m (VGS = 10V) RDS(ON) 38m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-So

AO4840www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M