AO4854 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO4854
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 110 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Encapsulados: SO-8
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AO4854 datasheet
ao4854.pdf
AO4854 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4854 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 8A make a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)
ao4854.pdf
SMD Type MOSFET Dual N-Channel MOSFET AO4854 (KO4854) SOP-8 Unit mm Features VDS (V) = 30V ID = 8A (VGS = 10V) 1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 23m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 RDS(ON) 26m (VGS = 4V) 7 D2 3 S1 ESD Rating 2KV HBM 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Paramete
ao4850.pdf
AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4850 uses advanced trench technology to provide VDS (V) = 75V excellent RDS(ON) and low gate charge. The two MOSFETs ID = 3.1A (VGS = 10V) may be used in H-bridge, Inverters and other applications. RDS(ON)
ao4852.pdf
AO4852 60V Dual N-Channel MOSFET General Description Product Summary The AO4852 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. As a pair ID = 3.5A (VGS = 10V) these MOSFETs operate very efficiently in Push Pull RDS(ON)
Otros transistores... AO4828, AO4830, AO4832, AO4838, AO4840, AO4842, AO4850, AO4852, IRLZ44N, AO4862, AO4882, AO4884, AO4886, AO4892, AO4914, AO4922, AO4924
History: STP60NS04ZB
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