AO4882 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4882
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 112 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4882

AO4882 Datasheet (PDF)

..1. Size:343K aosemi
ao4882.pdf

AO4882 40V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4882 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 8Apurpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)

..2. Size:1390K kexin
ao4882.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4882 (KO4882)SOP-8 Unit:mm Features VDS (V) = 40V1.50 0.15 ID = 8A (VGS = 10V) RDS(ON) 19m (VGS = 10V)1 S2 5 D1 RDS(ON) 27m (VGS = 4.5V)6 D12 G27 D23 S18 D24 G1D1 D2G1 G2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-So

0.1. Size:1355K msksemi
ao4882-ms.pdf

www.msksemi.comAO4882-MSSemiconductor CompianceApplicationD1D1D2D2Battery protectionS1G1Load switchS2G2Uninterruptible power supplySOP-8General FeaturesD1 D1 D2 D2V = 40V I =DS D 6A8 7 6 5R

9.1. Size:197K aosemi
ao4884.pdf

AO4884 40V Dual N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4884 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10Apurpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V)

9.2. Size:550K aosemi
ao4886.pdf

AO4886100V Dual N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO4886 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 3.3Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

9.3. Size:1076K kexin
ao4884.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4884 (KO4884)SOP-8 Unit:mm Features VDS (V) = 40V ID = 10A (VGS = 10V)1.50 0.15 RDS(ON) 13m (VGS = 10V) RDS(ON) 16m (VGS = 4.5V)1 S2 5 D1 6 D12 G27 D23 S18 D24 G1D1D2G1G2S1S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gat

9.4. Size:2656K kexin
ao4886.pdf

SMD Type MOSFETN-Channel Enhancement MOSFET AO4886 (KO4886) FeaturesSOP-8 VDS (V) = 100V ID = 3.3A (VGS = 10V) RDS(ON) 80m (VGS = 10V) RDS(ON) 91m (VGS = 4.5V)1.50 0.15D1 D2D1 D2Top ViewTop ViewS2 1 8 D2S2 1 8 D2G2 D2G2 D22277S1 3 6 D1S1 3 6 D1G1 4 5 D1 G1 G2G1 4 5 D1 G1 G2S1 S2S1 S2 Absolute Maximum Ratin

9.5. Size:1630K msksemi
ao4884-ms.pdf

www.msksemi.comAO4884-MSSemiconductorCompianceD1D1D2D2General FeaturesS1G1S2V = 40V I =10ADS DG2R

9.6. Size:1699K cn vbsemi
ao4884.pdf

AO4884www.VBsemi.twDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1240 5.9 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 10Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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