AO4882 Specs and Replacement
Type Designator: AO4882
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 112 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SO-8
AO4882 substitution
- MOSFET ⓘ Cross-Reference Search
AO4882 datasheet
ao4882.pdf
AO4882 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4882 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 8A purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V) ... See More ⇒
ao4882.pdf
SMD Type MOSFET Dual N-Channel MOSFET AO4882 (KO4882) SOP-8 Unit mm Features VDS (V) = 40V 1.50 0.15 ID = 8A (VGS = 10V) RDS(ON) 19m (VGS = 10V) 1 S2 5 D1 RDS(ON) 27m (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-So... See More ⇒
ao4882-ms.pdf
www.msksemi.com AO4882-MS Semiconductor Compiance Application D1 D1 D2 D2 Battery protection S1 G1 Load switch S2 G2 Uninterruptible power supply SOP-8 General Features D1 D1 D2 D2 V = 40V I = DS D 6A 8 7 6 5 R ... See More ⇒
ao4884.pdf
AO4884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10A purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AO4832, AO4838, AO4840, AO4842, AO4850, AO4852, AO4854, AO4862, IRF640N, AO4884, AO4886, AO4892, AO4914, AO4922, AO4924, AO4932, AO4938
Keywords - AO4882 MOSFET specs
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History: AGM40P35A | 3N70A
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