AO4914 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4914
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0205 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET AO4914

AO4914 Datasheet (PDF)

..1. Size:650K aosemi
ao4914.pdf

AO491430V Dual N-Channel MOSFET with Schottky DiodeGeneral Description Product SummaryThe AO4914 uses advanced trench technology to provideQ1(N-Channel) Q2(N-Channel)excellent RDS(ON) and low gate charge. The two MOSFETsVDS= 30V 30Vmake a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V)rectifier combination for use in DC-DC converters. A RDS(ON)

..2. Size:3080K kexin
ao4914.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4914 (KO4914)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V1.50 0.15 ID = 8 A (VGS = 10V) RDS(ON) 20.5m (VGS = 10V)1 S1/A 5 D2 RDS(ON) 28m (VGS = 4.5V)2 G1 6 D27 D1/K VDS (V) = 30V, IF = 3A, VF

9.1. Size:651K aosemi
ao4916.pdf

AO491630V Dual N-Channel MOSFET with Schottky DiodeGeneral Description Product SummaryThe AO4916 uses advanced trench technology to provideQ1(N-Channel) Q2(N-Channel)excellent RDS(ON) and low gate charge. The two MOSFETsVDS= 30V 30Vmake a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V)rectifier combination for use in DC-DC converters. A RDS(ON)

9.2. Size:370K aosemi
ao4916l.pdf

Rev 3: Nov 2004AO4916, AO4916L( Green Product )Dual N-Channel Enhancement Mode Field Effect Transistorwith Schottky DiodeGeneral Description FeaturesVDS (V) = 30VThe AO4916 uses advanced trench technology to ID = 8.5Aprovide excellent R DS(ON) and low gate charge. The RDS(ON)

9.3. Size:2359K kexin
ao4912.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4912 (KO4912)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 8.5 A (VGS = 10V)1.50 0.15 RDS(ON) 17m (VGS = 10V) RDS(ON) 25m (VGS = 4.5V)1 D2 5 D1/S2/K2 D2 6 D1/S2/K VDS (V) = 30V, IF = 3A, VF

9.4. Size:2153K kexin
ao4918.pdf

SMD Type MOSFETDual N-Channel MOSFETAO4918 (KO4918)SOP-8 Unit:mm FeaturesN-Channel 1 VDS (V) = 30V ID = 9.3 A (VGS = 10V)1.50 0.15 RDS(ON) 14.5m (VGS = 10V) RDS(ON) 16m (VGS = 4.5V)1 D2 5 D1/S2/K VDS (V) = 30V, IF = 3A, VF

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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