AO5803E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO5803E
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 17 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Encapsulados: SC89-6
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AO5803E datasheet
ao5803e.pdf
AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5803E/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge, and ID = -0.6A (VGS = -4.5V) operation with gate voltages as low as 1.8V, in the RDS(ON)
ao5800e.pdf
AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON), low gate charge, and ID = 0.4A (VGS = 10V) operation with gate voltages as low as 4.5V, in the RDS(ON)
ao5804e.pdf
AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)
Otros transistores... AO4938, AO4940, AO4948, AO4952, AO5401E, AO5404E, AO5600E, AO5800E, 2SK3878, AO5804E, AO6400, AO6401, AO6401A, AO6402, AO6402A, AO6403, AO6404
History: SVF830FJ
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