AO5803E MOSFET Datasheet: P-Ch, 20V, 0.6A. Full specification with pinout and replacement list

AO5803E Specs and Replacement

Type Designator: AO5803E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 17 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: SC89-6

AO5803E substitution

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AO5803E datasheet

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AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5803E/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge, and ID = -0.6A (VGS = -4.5V) operation with gate voltages as low as 1.8V, in the RDS(ON) ... See More ⇒

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AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON), low gate charge, and ID = 0.4A (VGS = 10V) operation with gate voltages as low as 4.5V, in the RDS(ON) ... See More ⇒

9.2. Size:201K aosemi
ao5804e.pdf pdf_icon

AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) ... See More ⇒

Detailed specifications: AO4938, AO4940, AO4948, AO4952, AO5401E, AO5404E, AO5600E, AO5800E, 2SK3878, AO5804E, AO6400, AO6401, AO6401A, AO6402, AO6402A, AO6403, AO6404