All MOSFET. AO5803E Datasheet

 

AO5803E Datasheet and Replacement


   Type Designator: AO5803E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: SC89-6
 

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AO5803E Datasheet (PDF)

 ..1. Size:111K  aosemi
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AO5803E

AO5803EDual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5803E/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge, andID = -0.6A (VGS = -4.5V)operation with gate voltages as low as 1.8V, in theRDS(ON)

 9.1. Size:159K  aosemi
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AO5803E

AO5800EDual N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO5800E uses advanced trench technology toVDS (V) = 60Vprovide excellent RDS(ON), low gate charge, andID = 0.4A (VGS = 10V)operation with gate voltages as low as 4.5V, in theRDS(ON)

 9.2. Size:201K  aosemi
 ao5804e.pdf pdf_icon

AO5803E

AO5804EDual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5804E/L uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)

Datasheet: AO4938 , AO4940 , AO4948 , AO4952 , AO5401E , AO5404E , AO5600E , AO5800E , IRFP260 , AO5804E , AO6400 , AO6401 , AO6401A , AO6402 , AO6402A , AO6403 , AO6404 .

History: SI4622DY | VBZL80N03

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