AO5803E
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO5803E
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 0.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 150
nS
Cossⓘ -
Output Capacitance: 17
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package: SC89-6
AO5803E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO5803E
Datasheet (PDF)
..1. Size:111K aosemi
ao5803e.pdf 
AO5803EDual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5803E/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge, andID = -0.6A (VGS = -4.5V)operation with gate voltages as low as 1.8V, in theRDS(ON)
9.1. Size:159K aosemi
ao5800e.pdf
AO5800EDual N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO5800E uses advanced trench technology toVDS (V) = 60Vprovide excellent RDS(ON), low gate charge, andID = 0.4A (VGS = 10V)operation with gate voltages as low as 4.5V, in theRDS(ON)
9.2. Size:201K aosemi
ao5804e.pdf
AO5804EDual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO5804E/L uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
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