AO5804E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO5804E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.38 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.3 nS
Cossⓘ - Capacitancia de salida: 8 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Encapsulados: SC89-6
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AO5804E datasheet
ao5804e.pdf
AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 0.5 A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)
ao5800e.pdf
AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON), low gate charge, and ID = 0.4A (VGS = 10V) operation with gate voltages as low as 4.5V, in the RDS(ON)
ao5803e.pdf
AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5803E/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge, and ID = -0.6A (VGS = -4.5V) operation with gate voltages as low as 1.8V, in the RDS(ON)
Otros transistores... AO4940, AO4948, AO4952, AO5401E, AO5404E, AO5600E, AO5800E, AO5803E, STP75NF75, AO6400, AO6401, AO6401A, AO6402, AO6402A, AO6403, AO6404, AO6405
History: TSM4513DCS
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