AO6401 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AO6401
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 80 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm
Encapsulados: TSOP-6
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AO6401 datasheet
ao6401.pdf
AO6401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)
ao6401.pdf
SMD Type MOSFET P-Channel MOSFET AO6401 (KO6401) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01 -0.01 +0.2 -0.1 D D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G G S S Abso
ao6401a.pdf
AO6401A 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -5A with gate voltages as low as 2.5V. This device is suitable RDS(ON) (at VGS=-10V)
ao6401-hf ko6401-hf.pdf
SMD Type MOSFET P-Channel MOSFET AO6401-HF (KO6401-HF) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01 -0.01 Pb-Free Package May be Available. The G-Suffix Denotes a +0.2 -0.1 Pb-Free
Otros transistores... AO4952, AO5401E, AO5404E, AO5600E, AO5800E, AO5803E, AO5804E, AO6400, IRF9540N, AO6401A, AO6402, AO6402A, AO6403, AO6404, AO6405, AO6408, AO6409
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