AO6401 - аналоги, параметры транзистора - Справочник транзисторов

AO6401 даташит

..1. Size:516K aosemi
ao6401.pdf pdf_icon

AO6401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

..2. Size:1723K kexin
ao6401.pdf pdf_icon

SMD Type MOSFET P-Channel MOSFET AO6401 (KO6401) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01 -0.01 +0.2 -0.1 D D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G G S S Abso

0.1. Size:237K aosemi
ao6401a.pdf pdf_icon

AO6401A 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -5A with gate voltages as low as 2.5V. This device is suitable RDS(ON) (at VGS=-10V)

0.2. Size:2477K kexin
ao6401-hf ko6401-hf.pdf pdf_icon

SMD Type MOSFET P-Channel MOSFET AO6401-HF (KO6401-HF) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 3 1 +0.02 0.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01 -0.01 Pb-Free Package May be Available. The G-Suffix Denotes a +0.2 -0.1 Pb-Free