AO6409A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO6409A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 7.4 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: TSOP-6

Búsqueda de reemplazo de MOSFET AO6409A

AO6409A Datasheet (PDF)

..1. Size:323K aosemi
ao6409a.pdf

AO6409A20V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO6409A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -5.5Awith gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)

..2. Size:2011K kexin
ao6409a.pdf

SMD Type MOSFETP-Channel MOSFETAO6409A (KO6409A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-20V6 5 4 ID =-5.5A (VGS =-4.5V) RDS(ON) 41m (VGS =-4.5V) RDS(ON) 53m (VGS =-2.5V)2 31 RDS(ON) 65m (VGS =-1.8V)+0.020.15 -0.02+0.01 ESD Rating: 2000V HBM -0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gat

8.1. Size:330K aosemi
ao6409.pdf

AO640920V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO6409 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -5.5Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V)

8.2. Size:1740K kexin
ao6409.pdf

SMD Type MOSFETP-Channel MOSFETAO6409 (KO6409)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-20V6 5 4 ID =-5.5A (VGS =-4.5V) RDS(ON) 41m (VGS =-4.5V) RDS(ON) 53m (VGS =-2.5V)2 31 RDS(ON) 65m (VGS =-1.8V)+0.020.15 -0.02+0.01 ESD Rating: 2000V HBM -0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gate

8.3. Size:834K cn vbsemi
ao6409.pdf

AO6409www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Chan

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