AO6409A - описание и поиск аналогов

AO6409A 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO6409A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -5.5A with gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)

SMD Type MOSFET P-Channel MOSFET AO6409A (KO6409A) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-20V 6 5 4 ID =-5.5A (VGS =-4.5V) RDS(ON) 41m (VGS =-4.5V) RDS(ON) 53m (VGS =-2.5V) 2 3 1 RDS(ON) 65m (VGS =-1.8V) +0.02 0.15 -0.02 +0.01 ESD Rating 2000V HBM -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gat

AO6409 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -5.5A voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V)

SMD Type MOSFET P-Channel MOSFET AO6409 (KO6409) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) =-20V 6 5 4 ID =-5.5A (VGS =-4.5V) RDS(ON) 41m (VGS =-4.5V) RDS(ON) 53m (VGS =-2.5V) 2 3 1 RDS(ON) 65m (VGS =-1.8V) +0.02 0.15 -0.02 +0.01 ESD Rating 2000V HBM -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate

AO6409 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Chan