AO6424 Todos los transistores

 ..1. Size:324K  aosemi
 ao6424.pdf

AO6424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO6424 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5A be used as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

 ..2. Size:1549K  kexin
 ao6424.pdf

SMD Type MOSFET N-Channel MOSFET AO6424 (KO6424) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 30V ID =5 A (VGS = 10V) RDS(ON) 31m (VGS = 10V) RDS(ON) 43m (VGS = 4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S Absolute Maximum Ratings Ta = 25 Parameter Sy

 0.1. Size:254K  aosemi
 ao6424a.pdf

AO6424A 30V N-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 6.5A Low Gate Charge RDS(ON) (at VGS=10V)

 0.2. Size:1237K  kexin
 ao6424a.pdf

SMD Type MOSFET N-Channel MOSFET AO6424A (KO6424A) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features VDS (V) = 30V 6 5 4 ID =6.5 A (VGS = 10V) RDS(ON) 35m (VGS = 10V) RDS(ON) 48m (VGS = 4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S Absolute Maximum Ratings Ta = 25 Paramet

 9.1. Size:220K  aosemi
 ao6422.pdf

AO6422 20V N-Channel MOSFET General Description Product Summary The AO6422 uses advanced trench technology to VDS = 20V provide excellent RDS(ON), low gate charge and ID = 5A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON)

 9.2. Size:195K  aosemi
 ao6420.pdf

AO6420 60V N-Channel MOSFET General Description Product Summary The AO6420 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. This ID = 4.2A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

 9.3. Size:1794K  kexin
 ao6422.pdf

SMD Type MOSFET N-Channel MOSFET AO6422 (KO6422) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 20V ID =5 A (VGS = 4.5V) RDS(ON) 44m (VGS = 4.5V) RDS(ON) 55m (VGS = 2.5V) 2 3 1 RDS(ON) 72m (VGS = 1.8V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S Absolute

 9.4. Size:1075K  kexin
 ao6420.pdf

SMD Type MOSFET N-Channel MOSFET AO6420 (KO6420) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 60V ID =4.2 A (VGS = 10V) RDS(ON) 60m (VGS = 10V) RDS(ON) 75m (VGS = 4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S Absolute Maximum Ratings Ta = 25 Paramete