AO6424
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO6424
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.55
nC
trⓘ - Rise Time: 2.5
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031
Ohm
Package:
TSOP-6
AO6424
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO6424
Datasheet (PDF)
..1. Size:324K aosemi
ao6424.pdf 
AO642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO6424 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5Abe used as a load switch or in PWM applications. RDS(ON) (at VGS=10V)
..2. Size:1549K kexin
ao6424.pdf
SMD Type MOSFETN-Channel MOSFETAO6424 (KO6424)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 30V ID =5 A (VGS = 10V) RDS(ON) 31m (VGS = 10V) RDS(ON) 43m (VGS = 4.5V) 2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG S Absolute Maximum Ratings Ta = 25Parameter Sy
0.1. Size:254K aosemi
ao6424a.pdf
AO6424A30V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 6.5A Low Gate Charge RDS(ON) (at VGS=10V)
0.2. Size:1237K kexin
ao6424a.pdf
SMD Type MOSFETN-Channel MOSFETAO6424A (KO6424A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) = 30V6 5 4 ID =6.5 A (VGS = 10V) RDS(ON) 35m (VGS = 10V) RDS(ON) 48m (VGS = 4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG S Absolute Maximum Ratings Ta = 25Paramet
9.1. Size:220K aosemi
ao6422.pdf
AO642220V N-Channel MOSFETGeneral Description Product SummaryThe AO6422 uses advanced trench technology to VDS = 20Vprovide excellent RDS(ON), low gate charge and ID = 5A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
9.2. Size:195K aosemi
ao6420.pdf
AO642060V N-Channel MOSFETGeneral Description Product SummaryThe AO6420 uses advanced trench technology to VDS (V) = 60Vprovide excellent RDS(ON) and low gate charge. This ID = 4.2A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)
9.3. Size:1794K kexin
ao6422.pdf
SMD Type MOSFETN-Channel MOSFETAO6422 (KO6422)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 20V ID =5 A (VGS = 4.5V) RDS(ON) 44m (VGS = 4.5V) RDS(ON) 55m (VGS = 2.5V)2 31 RDS(ON) 72m (VGS = 1.8V)+0.020.15 -0.02+0.01-0.01+0.2-0.1D 1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG S Absolute
9.4. Size:1075K kexin
ao6420.pdf
SMD Type MOSFETN-Channel MOSFETAO6420 (KO6420)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 60V ID =4.2 A (VGS = 10V) RDS(ON) 60m (VGS = 10V) RDS(ON) 75m (VGS = 4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1D 1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainG S Absolute Maximum Ratings Ta = 25Paramete
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