AO6601 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO6601
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.4(2.3) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1.5(3.5) nS
   Cossⓘ - Capacitancia de salida: 35(37) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06(0.115) Ohm
   Paquete / Cubierta: TSOP-6

Búsqueda de reemplazo de MOSFET AO6601

AO6601 Datasheet (PDF)

..1. Size:477K aosemi
ao6601.pdf

AO660130V Complementary MOSFETGeneral Description Product SummaryThe AO6601 uses advanced trench technology to N-Channel P-Channelprovide excellent RDS(ON) and low gate charge. TheVDS= 30V -30Vcomplementary MOSFETs form a high-speed power ID= 3.4A (VGS=10V) -2.3A (VGS=-10V)inverter, suitable for a multitude of applications. RDS(ON) RDS(ON)

..2. Size:354K kexin
ao6601 ko6601.pdf

SMD Type MOSFETComplementary Trench MOSFET AO6601 (KO6601)( )SOT-23-6 +0.10.4 -0.1 Features6 5 4N-Channel : VDS (V) = 30V ID = 3.4 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)2 31 RDS(ON) 70m (VGS = 4.5V) +0.01-0.01 RDS(ON) 90m (VGS = 2.5V)+0.2-0.1P-Channel : VDS (V) = -30V ID = -2.3 A (VGS = 10V)4 D21 G1 RDS

..3. Size:2690K kexin
ao6601.pdf

SMD Type MOSFETComplementary Trench MOSFET AO6601 (KO6601)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4N-Channel : VDS (V) = 30V ID = 3.4 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)2 31 RDS(ON) 70m (VGS = 4.5V)+0.020.15 -0.02+0.01-0.01 RDS(ON) 90m (VGS = 2.5V)+0.2-0.1P-Channel : VDS (V) = -30V ID = -2.3

9.1. Size:432K aosemi
ao6602g.pdf

AO6602G 30V Complementary MOSFETGeneral Description Product Summary Trench Power MOSFET technology N-Channel P-Channel Low RDS(ON)VDS= 30V -30V Low Gate Charge ID= 3.5A (VGS=10V) -2.7A (VGS=-10V) RoHS and Halogen-Free Compliant RDS(ON) RDS(ON)

9.2. Size:322K aosemi
ao6602.pdf

AO660230V Complementary MOSFETGeneral Description Product SummaryThe AO6602 uses advanced trench technology to provide N-Channel P-Channelexcellent RDS(ON) and low gate charge. TheVDS= 30V -30Vcomplementary MOSFETs form a high-speed power ID= 3.5A (VGS=10V) -2.7A (VGS=-10V)inverter, suitable for a multitude of applications. RDS(ON) RDS(ON)

9.3. Size:767K aosemi
ao6604.pdf

AO660420V Complementary MOSFETGeneral Description Product SummaryThe AO6604 combines advanced trench MOSFET N-Channel P-Channeltechnology with a low resistance package to provideVDS= 20V -20Vextremely low RDS(ON). This device is ideal for load switch ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V)and battery protection applications. RDS(ON) RDS(ON)

9.4. Size:381K aosemi
ao6608.pdf

AO660820V Complementary MOSFETGeneral Description Product SummaryThe AO6608 combines advanced trench MOSFET N-Channel P-Channeltechnology with a low resistance package to provideVDS= 30V -20Vextremely low RDS(ON). This device is ideal for load switch ID= 3.4A (VGS=10V) -3.3A (VGS=-4.5V)and battery protection applications. RDS(ON) RDS(ON)

9.5. Size:2009K kexin
ao6602.pdf

SMD Type MOSFETComplementary Trench MOSFETAO6602 (KO6602)( )SOT-23-6 Unit: mm0.4+0.1-0.1 FeaturesN-Channel6 5 4 VDS (V) = 30V ID =3.5 A (VGS = 10V) RDS(ON) 50m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V)2 31+0.02P-Channel0.15 -0.02+0.01-0.01 VDS (V) = -30V+0.2-0.1 ID =-2.7 A (VGS = -10V) RDS(ON) 100m (VG

9.6. Size:3580K kexin
ao6604.pdf

SMD Type MOSFETComplementary Trench MOSFET AO6604 (KO6604)( )SOT-23-6 Unit: mm Features 0.4+0.1-0.1 N-ChannelVDS=20V ID=3.4A6 5 4RDS(ON) 65m (VGS = 4.5V)RDS(ON) 75m (VGS = 2.5V)RDS(ON) 100m (VGS = 1.8V) P-ChannelVDS=-20V ID=-2.5A2 31RDS(ON) 75m (VGS =-4.5V)+0.020.15 -0.02+0.01-0.01RDS(ON) 95m (VGS =-2.5V)+0

9.7. Size:3581K kexin
ao6604 ko6604.pdf

9.8. Size:922K cn vbsemi
ao6604.pdf

AO6604www.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at VGS

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