AO6601 - описание и поиск аналогов

AO6601 30V Complementary MOSFET General Description Product Summary The AO6601 uses advanced trench technology to N-Channel P-Channel provide excellent RDS(ON) and low gate charge. The VDS= 30V -30V complementary MOSFETs form a high-speed power ID= 3.4A (VGS=10V) -2.3A (VGS=-10V) inverter, suitable for a multitude of applications. RDS(ON) RDS(ON)

SMD Type MOSFET Complementary Trench MOSFET AO6601 (KO6601) ( ) SOT-23-6 +0.1 0.4 -0.1 Features 6 5 4 N-Channel VDS (V) = 30V ID = 3.4 A (VGS = 10V) RDS(ON) 60m (VGS = 10V) 2 3 1 RDS(ON) 70m (VGS = 4.5V) +0.01 -0.01 RDS(ON) 90m (VGS = 2.5V) +0.2 -0.1 P-Channel VDS (V) = -30V ID = -2.3 A (VGS = 10V) 4 D2 1 G1 RDS

SMD Type MOSFET Complementary Trench MOSFET AO6601 (KO6601) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 N-Channel VDS (V) = 30V ID = 3.4 A (VGS = 10V) RDS(ON) 60m (VGS = 10V) 2 3 1 RDS(ON) 70m (VGS = 4.5V) +0.02 0.15 -0.02 +0.01 -0.01 RDS(ON) 90m (VGS = 2.5V) +0.2 -0.1 P-Channel VDS (V) = -30V ID = -2.3

AO6602G 30V Complementary MOSFET General Description Product Summary Trench Power MOSFET technology N-Channel P-Channel Low RDS(ON) VDS= 30V -30V Low Gate Charge ID= 3.5A (VGS=10V) -2.7A (VGS=-10V) RoHS and Halogen-Free Compliant RDS(ON) RDS(ON)

AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. The VDS= 30V -30V complementary MOSFETs form a high-speed power ID= 3.5A (VGS=10V) -2.7A (VGS=-10V) inverter, suitable for a multitude of applications. RDS(ON) RDS(ON)

AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET N-Channel P-Channel technology with a low resistance package to provide VDS= 20V -20V extremely low RDS(ON). This device is ideal for load switch ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V) and battery protection applications. RDS(ON) RDS(ON)

AO6608 20V Complementary MOSFET General Description Product Summary The AO6608 combines advanced trench MOSFET N-Channel P-Channel technology with a low resistance package to provide VDS= 30V -20V extremely low RDS(ON). This device is ideal for load switch ID= 3.4A (VGS=10V) -3.3A (VGS=-4.5V) and battery protection applications. RDS(ON) RDS(ON)

SMD Type MOSFET Complementary Trench MOSFET AO6602 (KO6602) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features N-Channel 6 5 4 VDS (V) = 30V ID =3.5 A (VGS = 10V) RDS(ON) 50m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) 2 3 1 +0.02 P-Channel 0.15 -0.02 +0.01 -0.01 VDS (V) = -30V +0.2 -0.1 ID =-2.7 A (VGS = -10V) RDS(ON) 100m (VG

SMD Type MOSFET Complementary Trench MOSFET AO6604 (KO6604) ( ) SOT-23-6 Unit mm Features 0.4+0.1 -0.1 N-Channel VDS=20V ID=3.4A 6 5 4 RDS(ON) 65m (VGS = 4.5V) RDS(ON) 75m (VGS = 2.5V) RDS(ON) 100m (VGS = 1.8V) P-Channel VDS=-20V ID=-2.5A 2 3 1 RDS(ON) 75m (VGS =-4.5V) +0.02 0.15 -0.02 +0.01 -0.01 RDS(ON) 95m (VGS =-2.5V) +0

SMD Type MOSFET Complementary Trench MOSFET AO6604 (KO6604) ( ) SOT-23-6 Unit mm Features 0.4+0.1 -0.1 N-Channel VDS=20V ID=3.4A 6 5 4 RDS(ON) 65m (VGS = 4.5V) RDS(ON) 75m (VGS = 2.5V) RDS(ON) 100m (VGS = 1.8V) P-Channel VDS=-20V ID=-2.5A 2 3 1 RDS(ON) 75m (VGS =-4.5V) +0.02 0.15 -0.02 +0.01 -0.01 RDS(ON) 95m (VGS =-2.5V) +0

AO6604 www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at VGS