AO6601 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AO6601
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 1.15 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.4(2.3) A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 4.7 nC
trⓘ - Время нарастания: 1.5(3.5) ns
Cossⓘ - Выходная емкость: 35(37) pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06(0.115) Ohm
Тип корпуса: TSOP-6
AO6601 Datasheet (PDF)
ao6601.pdf
AO660130V Complementary MOSFETGeneral Description Product SummaryThe AO6601 uses advanced trench technology to N-Channel P-Channelprovide excellent RDS(ON) and low gate charge. TheVDS= 30V -30Vcomplementary MOSFETs form a high-speed power ID= 3.4A (VGS=10V) -2.3A (VGS=-10V)inverter, suitable for a multitude of applications. RDS(ON) RDS(ON)
ao6601 ko6601.pdf
SMD Type MOSFETComplementary Trench MOSFET AO6601 (KO6601)( )SOT-23-6 +0.10.4 -0.1 Features6 5 4N-Channel : VDS (V) = 30V ID = 3.4 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)2 31 RDS(ON) 70m (VGS = 4.5V) +0.01-0.01 RDS(ON) 90m (VGS = 2.5V)+0.2-0.1P-Channel : VDS (V) = -30V ID = -2.3 A (VGS = 10V)4 D21 G1 RDS
ao6601.pdf
SMD Type MOSFETComplementary Trench MOSFET AO6601 (KO6601)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4N-Channel : VDS (V) = 30V ID = 3.4 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)2 31 RDS(ON) 70m (VGS = 4.5V)+0.020.15 -0.02+0.01-0.01 RDS(ON) 90m (VGS = 2.5V)+0.2-0.1P-Channel : VDS (V) = -30V ID = -2.3
ao6602g.pdf
AO6602G 30V Complementary MOSFETGeneral Description Product Summary Trench Power MOSFET technology N-Channel P-Channel Low RDS(ON)VDS= 30V -30V Low Gate Charge ID= 3.5A (VGS=10V) -2.7A (VGS=-10V) RoHS and Halogen-Free Compliant RDS(ON) RDS(ON)
ao6602.pdf
AO660230V Complementary MOSFETGeneral Description Product SummaryThe AO6602 uses advanced trench technology to provide N-Channel P-Channelexcellent RDS(ON) and low gate charge. TheVDS= 30V -30Vcomplementary MOSFETs form a high-speed power ID= 3.5A (VGS=10V) -2.7A (VGS=-10V)inverter, suitable for a multitude of applications. RDS(ON) RDS(ON)
ao6604.pdf
AO660420V Complementary MOSFETGeneral Description Product SummaryThe AO6604 combines advanced trench MOSFET N-Channel P-Channeltechnology with a low resistance package to provideVDS= 20V -20Vextremely low RDS(ON). This device is ideal for load switch ID= 3.4A (VGS=4.5V) -2.5A (VGS=-4.5V)and battery protection applications. RDS(ON) RDS(ON)
ao6608.pdf
AO660820V Complementary MOSFETGeneral Description Product SummaryThe AO6608 combines advanced trench MOSFET N-Channel P-Channeltechnology with a low resistance package to provideVDS= 30V -20Vextremely low RDS(ON). This device is ideal for load switch ID= 3.4A (VGS=10V) -3.3A (VGS=-4.5V)and battery protection applications. RDS(ON) RDS(ON)
ao6602.pdf
SMD Type MOSFETComplementary Trench MOSFETAO6602 (KO6602)( )SOT-23-6 Unit: mm0.4+0.1-0.1 FeaturesN-Channel6 5 4 VDS (V) = 30V ID =3.5 A (VGS = 10V) RDS(ON) 50m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V)2 31+0.02P-Channel0.15 -0.02+0.01-0.01 VDS (V) = -30V+0.2-0.1 ID =-2.7 A (VGS = -10V) RDS(ON) 100m (VG
ao6604.pdf
SMD Type MOSFETComplementary Trench MOSFET AO6604 (KO6604)( )SOT-23-6 Unit: mm Features 0.4+0.1-0.1 N-ChannelVDS=20V ID=3.4A6 5 4RDS(ON) 65m (VGS = 4.5V)RDS(ON) 75m (VGS = 2.5V)RDS(ON) 100m (VGS = 1.8V) P-ChannelVDS=-20V ID=-2.5A2 31RDS(ON) 75m (VGS =-4.5V)+0.020.15 -0.02+0.01-0.01RDS(ON) 95m (VGS =-2.5V)+0
ao6604 ko6604.pdf
SMD Type MOSFETComplementary Trench MOSFET AO6604 (KO6604)( )SOT-23-6 Unit: mm Features 0.4+0.1-0.1 N-ChannelVDS=20V ID=3.4A6 5 4RDS(ON) 65m (VGS = 4.5V)RDS(ON) 75m (VGS = 2.5V)RDS(ON) 100m (VGS = 1.8V) P-ChannelVDS=-20V ID=-2.5A2 31RDS(ON) 75m (VGS =-4.5V)+0.020.15 -0.02+0.01-0.01RDS(ON) 95m (VGS =-2.5V)+0
ao6604.pdf
AO6604www.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at VGS
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
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