AO6801 Todos los transistores

 

AO6801 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AO6801
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 37 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: TSOP-6
 

 Búsqueda de reemplazo de AO6801 MOSFET

   - Selección ⓘ de transistores por parámetros

 

AO6801 Datasheet (PDF)

 ..1. Size:270K  aosemi
ao6801.pdf pdf_icon

AO6801

AO680130V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6801 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)

 ..2. Size:1386K  kexin
ao6801.pdf pdf_icon

AO6801

SMD Type MOSFETDual P-Channel MOSFETAO6801 (KO6801)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V)2 31 RDS(ON) 200m (VGS =-2.5V) +0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1G1

 0.1. Size:331K  aosemi
ao6801a.pdf pdf_icon

AO6801

AO6801A30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6801A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)

 0.2. Size:303K  aosemi
ao6801e.pdf pdf_icon

AO6801

AO6801E30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AO6801E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

Otros transistores... AO6422 , AO6424 , AO6424A , AO6432 , AO6601 , AO6602 , AO6604 , AO6800 , IRFP250 , AO6801A , AO6801E , AO6802 , AO6804A , AO6808 , AO6810 , AO7400 , AO7401 .

History: BRCS070N08SRA | VP3203N3 | AP6N1R7CDT | AP4501AGEM-HF | SPI21N50C3 | IRF9540SPBF | GP2M007A065XG

 

 
Back to Top

 


 
.