AO7412 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO7412
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1.5 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SC70-6

Búsqueda de reemplazo de MOSFET AO7412

AO7412 Datasheet (PDF)

..1. Size:238K aosemi
ao7412.pdf

AO741230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7412 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 1.7Avoltages as low as 2.5V, in the small SOT323 footprint. It RDS(ON) (at VGS=10V)

9.1. Size:209K aosemi
ao7417.pdf

AO741720V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7417 uses advanced trench technology to provide -20Vexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -2Avoltages as low as 1.5V, in the small SOT363 footprint. RDS(ON) (at VGS=-4.5V)

9.2. Size:199K aosemi
ao7414.pdf

AO741420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO7414 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 2Avoltages as low as 1.8V, in the small SOT-323 footprint. It RDS(ON) (at VGS=4.5V)

9.3. Size:213K aosemi
ao7413.pdf

AO741320V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO7413 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -1.4Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

9.4. Size:213K aosemi
ao7415.pdf

AO741520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO7415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)

9.5. Size:353K aosemi
ao7411.pdf

AO741120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7411 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.8Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)

9.6. Size:230K aosemi
ao7410.pdf

AO741030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7410 uses advanced trench technology toprovide excellent RDS(ON), very low gate charge and ID (at VGS=10V) 1.7Aoperation with gate voltages as low as 2.5V. This RDS(ON) (at VGS=10V)

9.7. Size:871K cn vbsemi
ao7414.pdf

AO7414www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAP

Otros transistores... AO7401 , AO7403 , AO7404 , AO7405 , AO7407 , AO7408 , AO7410 , AO7411 , STP65NF06 , AO7413 , AO7414 , AO7415 , AO7417 , AO7600 , AO7800 , AO7801 , AO8801 .

History: SHD218507B

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