AO7412
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO7412
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 1.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 1.5
nS
Cossⓘ -
Output Capacitance: 35
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SC70-6
AO7412
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO7412
Datasheet (PDF)
..1. Size:238K aosemi
ao7412.pdf 
AO741230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7412 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 1.7Avoltages as low as 2.5V, in the small SOT323 footprint. It RDS(ON) (at VGS=10V)
9.1. Size:209K aosemi
ao7417.pdf
AO741720V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7417 uses advanced trench technology to provide -20Vexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -2Avoltages as low as 1.5V, in the small SOT363 footprint. RDS(ON) (at VGS=-4.5V)
9.2. Size:199K aosemi
ao7414.pdf
AO741420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO7414 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 2Avoltages as low as 1.8V, in the small SOT-323 footprint. It RDS(ON) (at VGS=4.5V)
9.3. Size:213K aosemi
ao7413.pdf
AO741320V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO7413 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -1.4Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)
9.4. Size:213K aosemi
ao7415.pdf
AO741520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO7415 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V)
9.5. Size:353K aosemi
ao7411.pdf
AO741120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7411 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.8Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)
9.6. Size:230K aosemi
ao7410.pdf
AO741030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7410 uses advanced trench technology toprovide excellent RDS(ON), very low gate charge and ID (at VGS=10V) 1.7Aoperation with gate voltages as low as 2.5V. This RDS(ON) (at VGS=10V)
9.7. Size:871K cn vbsemi
ao7414.pdf
AO7414www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAP
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