AO8814 Todos los transistores

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 ao8814.pdf

AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 7.5 A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)

 9.1. Size:113K  aosemi
 ao8818.pdf

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 ao8816.pdf

AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V) operation with gate voltages as low as 2.5V. This RDS(ON)

 9.3. Size:216K  aosemi
 ao8810.pdf

AO8810 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. ID (at VGS=4.5V) 7A This device is suitable for use as a uni-directional or bi- RDS(ON) (at VGS= 4.5V)

 9.4. Size:1301K  kexin
 ao8810.pdf

SMD Type MOSFET Dual N-Channel MOSFET AO8810 SOP-8 Features VDS (V) = 20V ID = 7 A (VGS = 4.5V) RDS(ON) 20m (VGS = 4.5V) 1.50 0.15 RDS(ON) 24m (VGS = 2.5V) RDS(ON) 32m (VGS = 1.8V) ESD Rating 2000V HBM D1 D2 S1 1 8 D1 2 7 G1 D1 3 6 S2 D2 4 5 G2 D2 G1 G2 S2 S1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rati

 9.5. Size:841K  cn vbsemi
 ao8810.pdf

AO8810 www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.013 at VGS = 4.5 V Available 7.6 20 RoHS* 0.020 at VGS = 2.5 V 6.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RATINGS TA = 25