AO8814 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AO8814
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.5 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 7.5 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 190 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm
Тип корпуса: TSSOP-8
AO8814 Datasheet (PDF)
ao8814.pdf
AO8814Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description FeaturesThe AO8814 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge andID = 7.5 A (VGS = 10V)operation with gate voltages as low as 1.8V whileRDS(ON)
ao8818.pdf
AO8818Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8818 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 7A (VGS = 10V)operation with gate voltages as low as 2.5V while RDS(ON)
ao8816.pdf
AO8816Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8816 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V)operation with gate voltages as low as 2.5V. This RDS(ON)
ao8810.pdf
AO881020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8810 uses advanced trench technology to provideexcellent RDS(ON), low gate charge. It is ESD protected. ID (at VGS=4.5V) 7AThis device is suitable for use as a uni-directional or bi- RDS(ON) (at VGS= 4.5V)
ao8810.pdf
SMD Type MOSFETDual N-Channel MOSFETAO8810SOP-8 Features VDS (V) = 20V ID = 7 A (VGS = 4.5V) RDS(ON) 20m (VGS = 4.5V) 1.50 0.15 RDS(ON) 24m (VGS = 2.5V) RDS(ON) 32m (VGS = 1.8V) ESD Rating: 2000V HBMD1 D2S1 1 8 D12 7G1 D13 6S2 D24 5G2 D2G1 G2S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rati
ao8810.pdf
AO8810www.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.013 at VGS = 4.5 V Available7.620RoHS*0.020 at VGS = 2.5 V 6.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATINGS TA = 25
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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