AOB1404L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOT1404L/AOB1404L40V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS40VThe AOT1404L/AOB1404L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 220Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

AOB1404Lwww.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.005 at VGS = 10 V 10040 53 nC 100 % Rg and UIS tested0.006 at VGS = 4.5 V 98 Material categorization:for definitions of compliance please seeDTO-263GSSSDDGG

isc N-Channel MOSFET Transistor AOB1404LFEATURESDrain Current I = 220A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

AOT14N50/AOB14N50/AOTF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50 &AOB14N50 & AOTF14N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOB14N50FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp