All MOSFET. AOB1404L Datasheet

 

AOB1404L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOB1404L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 71 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1388 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO-263

 AOB1404L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOB1404L Datasheet (PDF)

 ..1. Size:425K  aosemi
 aob1404l.pdf

AOB1404L AOB1404L

AOT1404L/AOB1404L40V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS40VThe AOT1404L/AOB1404L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 220Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 ..2. Size:918K  cn vbsemi
 aob1404l.pdf

AOB1404L AOB1404L

AOB1404Lwww.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.005 at VGS = 10 V 10040 53 nC 100 % Rg and UIS tested0.006 at VGS = 4.5 V 98 Material categorization:for definitions of compliance please seeDTO-263GSSSDDGG

 ..3. Size:253K  inchange semiconductor
 aob1404l.pdf

AOB1404L AOB1404L

isc N-Channel MOSFET Transistor AOB1404LFEATURESDrain Current I = 220A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.1. Size:258K  aosemi
 aob14n50.pdf

AOB1404L AOB1404L

AOT14N50/AOB14N50/AOTF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50 &AOB14N50 & AOTF14N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.2. Size:253K  inchange semiconductor
 aob14n50.pdf

AOB1404L AOB1404L

isc N-Channel MOSFET Transistor AOB14N50FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STB300NH02L | MDF5N50ZTH | NTMS5P02R2SG | SSF70N10A | STHV82FI | MCH6604 | WMB090DNV6LG4

 

 
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