AOB260L Todos los transistores

 ..1. Size:276K  aosemi
 aob260l.pdf

AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 ..2. Size:402K  aosemi
 aot260l aob260l.pdf

AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 ..3. Size:257K  inchange semiconductor
 aob260l.pdf

Isc N-Channel MOSFET Transistor AOB260l FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 8.1. Size:420K  aosemi
 aot2606l aob2606l aotf2606l.pdf

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.2. Size:289K  aosemi
 aob2608l.pdf

AOT2608L/AOB2608L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72A technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 8.3. Size:349K  aosemi
 aob2606l.pdf

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.4. Size:238K  inchange semiconductor
 aob2608l.pdf

isc N-Channel MOSFET Transistor AOB2608L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 8.5. Size:264K  inchange semiconductor
 aob2606l.pdf

sc N-Channel MOSFET Transistor AOB2606L FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATING