All MOSFET. AOB260L Datasheet

 

AOB260L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOB260L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 1360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO-263

 AOB260L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOB260L Datasheet (PDF)

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 aob260l.pdf

AOB260L AOB260L

AOT260L/AOB260L60V N-Channel MOSFETGeneral Description Product SummaryThe AOT(B)260L uses Trench MOSFET technology that VDS60Vis uniquely optimized to provide the most efficient high ID (at VGS=10V) 140Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 ..2. Size:257K  inchange semiconductor
 aob260l.pdf

AOB260L AOB260L

Isc N-Channel MOSFET Transistor AOB260lFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 8.1. Size:289K  aosemi
 aob2608l.pdf

AOB260L AOB260L

AOT2608L/AOB2608L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72Atechnology that is uniquely optimized to provide the mostefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 8.2. Size:349K  aosemi
 aob2606l.pdf

AOB260L AOB260L

AOT2606L/AOB2606L/AOTF2606L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2606L & AOB2606L & AOTF2606L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.3. Size:238K  inchange semiconductor
 aob2608l.pdf

AOB260L AOB260L

isc N-Channel MOSFET Transistor AOB2608LFEATURESDrain Current I = 72A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 8.4. Size:264K  inchange semiconductor
 aob2606l.pdf

AOB260L AOB260L

sc N-Channel MOSFET Transistor AOB2606LFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATING

Datasheet: AOB210L , AOB240L , AOB2500L , AOB254L , AOB256L , AOB25S65 , AOB2606L , AOB2608L , AON6414A , AOB2618L , AOB262L , AOB264L , AOB266L , AOB270AL , AOB27S60 , AOB280L , AOB282L .

History: IXTP300N04T2

 

 
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