AOB411L Todos los transistores

 ..1. Size:326K  aosemi
 aob411l.pdf

AOB411L 60V P-Channel MOSFET General Description Product Summary VDS The AOB411L combines advanced trench MOSFET -60V -78A technology with a low resistance package to provide ID (at VGS=-10V) extremely low RDS(ON).This device is ideal for boost

 ..2. Size:236K  inchange semiconductor
 aob411l.pdf

isc P-Channel MOSFET Transistor AOB411L FEATURES Drain Current I = -78A@ T =25 D C Drain Source Voltage- V = -60V(Min) DSS Static Drain-Source On-Resistance R = 16.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge

 9.1. Size:268K  aosemi
 aob416.pdf

AOB416 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOB416 is fabricated with SDMOSTM trench 45A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate

 9.2. Size:416K  aosemi
 aot410l aob410l.pdf

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with ID (at VGS=10V) 150A low gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)

 9.3. Size:296K  aosemi
 aob418l.pdf

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D

 9.4. Size:177K  aosemi
 aob4184.pdf

AOB4184 40V N-Channel MOSFET General Description Features The AOB4184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate VDS (V) =40V charge. With the excellent thermal resistance of the ID = 50 A (VGS = 10V) D2PAK package, this device is well suited for high RDS(ON)

 9.5. Size:313K  aosemi
 aot412 aob412l.pdf

 9.6. Size:344K  aosemi
 aob410l.pdf

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.7. Size:313K  aosemi
 aob412l.pdf

 9.8. Size:350K  aosemi
 aob414.pdf

AOB414 TM N-Channel SDMOS Power Transistor General Description Product Summary VDS 100V The AOB414/L is fabricated with SDMOSTM trench ID (at VGS=10V) 51A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 9.9. Size:296K  aosemi
 aob418.pdf

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D

 9.10. Size:689K  cn wxdh
 aob413 aod413.pdf

AOB413/AOD413 30A 40V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -40V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R = 30m DS(on) (TYP) RoHS standard. I = -30A D 2 Features Fast switching Low on resistance Low gate charge Low reverse tr

 9.11. Size:238K  inchange semiconductor
 aob416.pdf

isc N-Channel MOSFET Transistor AOB416 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 36m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

 9.12. Size:239K  inchange semiconductor
 aob418l.pdf

isc N-Channel MOSFET Transistor AOB418L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 9.13. Size:238K  inchange semiconductor
 aob4184.pdf

isc N-Channel MOSFET Transistor AOB4184 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 10.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

 9.14. Size:238K  inchange semiconductor
 aob410l.pdf

isc N-Channel MOSFET Transistor AOB410L FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 6.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 9.15. Size:238K  inchange semiconductor
 aob412l.pdf

isc N-Channel MOSFET Transistor AOB412L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 15.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

 9.16. Size:237K  inchange semiconductor
 aob414.pdf

isc N-Channel MOSFET Transistor AOB414 FEATURES Drain Current I = 51A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera