AOB411L - описание и поиск аналогов

AOB411L 60V P-Channel MOSFET General Description Product Summary VDS The AOB411L combines advanced trench MOSFET -60V -78A technology with a low resistance package to provide ID (at VGS=-10V) extremely low RDS(ON).This device is ideal for boost

isc P-Channel MOSFET Transistor AOB411L FEATURES Drain Current I = -78A@ T =25 D C Drain Source Voltage- V = -60V(Min) DSS Static Drain-Source On-Resistance R = 16.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge

AOB416 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOB416 is fabricated with SDMOSTM trench 45A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with ID (at VGS=10V) 150A low gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D

AOB4184 40V N-Channel MOSFET General Description Features The AOB4184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate VDS (V) =40V charge. With the excellent thermal resistance of the ID = 50 A (VGS = 10V) D2PAK package, this device is well suited for high RDS(ON)

AOT410L/AOB410L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT410L/AOB410L is fabricated with SDMOSTM VDS trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

AOB414 TM N-Channel SDMOS Power Transistor General Description Product Summary VDS 100V The AOB414/L is fabricated with SDMOSTM trench ID (at VGS=10V) 51A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

AOT418L/AOB418L 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOT418L/AOB418L is fabricated with SDMOSTM VDS 105A trench technology that combines excellent RDS(ON) with low I (at VGS=10V) D

AOB413/AOD413 30A 40V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhanced vdmosfets, used advanced V = -40V DSS trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the R = 30m DS(on) (TYP) RoHS standard. I = -30A D 2 Features Fast switching Low on resistance Low gate charge Low reverse tr

isc N-Channel MOSFET Transistor AOB416 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 36m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

isc N-Channel MOSFET Transistor AOB418L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

isc N-Channel MOSFET Transistor AOB4184 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 10.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene

isc N-Channel MOSFET Transistor AOB410L FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 6.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

isc N-Channel MOSFET Transistor AOB412L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 15.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen

isc N-Channel MOSFET Transistor AOB414 FEATURES Drain Current I = 51A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera