AOB42S60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOB42S60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 417 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 135 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.109 Ohm
Encapsulados: TO-263
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AOB42S60 datasheet
aob42s60.pdf
AOT42S60/AOB42S60 TM 600V 37A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60 & AOB42S60 have been fabricated using IDM 166A the advanced MOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.109 robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS alo
aob42s60.pdf
isc N-Channel MOSFET Transistor AOB42S60 FEATURES Drain Current I = 37A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 109m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen
aot42s60l aob42s60l.pdf
AOT42S60L/AOB42S60L TM 600V 37A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT42S60L & AOB42S60L have been fabricated IDM 166A using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and RDS(ON),max 0.109W robustness in switching applications. Qg,typ 40nC By providing low RDS(on), Qg and EOSS alo
Otros transistores... AOB409L , AOB410L , AOB411L , AOB412L , AOB414 , AOB416 , AOB4184 , AOB418L , 13N50 , AOB440 , AOB442 , AOB462L , AOB466L , AOB470L , AOB480L , AOB482L , AOB4S60 .
History: SML4040AN | ELM53404CA-S
History: SML4040AN | ELM53404CA-S
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