All MOSFET. AOB42S60 Datasheet

 

AOB42S60 Datasheet and Replacement


   Type Designator: AOB42S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 40 nC
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.109 Ohm
   Package: TO-263
 

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AOB42S60 Datasheet (PDF)

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AOB42S60

AOT42S60/AOB42S60TM600V 37A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOB42S60 have been fabricated using IDM 166Athe advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.109robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS alo

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AOB42S60

isc N-Channel MOSFET Transistor AOB42S60FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

Datasheet: AOB409L , AOB410L , AOB411L , AOB412L , AOB414 , AOB416 , AOB4184 , AOB418L , AON7506 , AOB440 , AOB442 , AOB462L , AOB466L , AOB470L , AOB480L , AOB482L , AOB4S60 .

Keywords - AOB42S60 MOSFET datasheet

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