AOB440 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOB440 datasheet

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AOB440 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB440 uses advanced trench technology and VDS (V) = 60V design to provide excellent RDS(ON) with low gate ID = 75 A (VGS = 10V) charge. This device is suitable for use in UPS, high RDS(ON)

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isc N-Channel MOSFET Transistor AOB440 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera

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AOB442 40V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 40V The AOB442 is fabricated with SDMOSTM trench 105A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate

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isc N-Channel MOSFET Transistor AOB442 FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 4.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener

Otros transistores... AOB410L , AOB411L , AOB412L , AOB414 , AOB416 , AOB4184 , AOB418L , AOB42S60 , AON7410 , AOB442 , AOB462L , AOB466L , AOB470L , AOB480L , AOB482L , AOB4S60 , AOB7S60 .