AOB440 PDF and Equivalents Search

 ..1. Size:86K  aosemi
 aob440.pdf

AOB440 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB440 uses advanced trench technology and VDS (V) = 60V design to provide excellent RDS(ON) with low gate ID = 75 A (VGS = 10V) charge. This device is suitable for use in UPS, high RDS(ON) ... See More ⇒

 ..2. Size:238K  inchange semiconductor
 aob440.pdf

isc N-Channel MOSFET Transistor AOB440 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and genera... See More ⇒

 9.1. Size:676K  aosemi
 aob442.pdf

AOB442 40V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 40V The AOB442 is fabricated with SDMOSTM trench 105A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate ... See More ⇒

 9.2. Size:238K  inchange semiconductor
 aob442.pdf

isc N-Channel MOSFET Transistor AOB442 FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 4.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener... See More ⇒