AOB440 Datasheet and Replacement. Cross Reference Search

AOB440 Datasheet (PDF)

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AOB440N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOB440 uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 75 A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)

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isc N-Channel MOSFET Transistor AOB440FEATURESDrain Current I = 75A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

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AOB44240V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS40VThe AOB442 is fabricated with SDMOSTM trench 105A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate

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isc N-Channel MOSFET Transistor AOB442FEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener

Datasheet: AOB410L , AOB411L , AOB412L , AOB414 , AOB416 , AOB4184 , AOB418L , AOB42S60 , 5N60 , AOB442 , AOB462L , AOB466L , AOB470L , AOB480L , AOB482L , AOB4S60 , AOB7S60 .